Enhanced performance of Cu/P-type GaN triboelectric nanogenerator through heterojunction

Kai Xiao,Qianqian Luo,Yaoze Li,Jianli Ji,Xin Qiu,Dekun Luo,Jianyu Deng,Wenhong Sun
DOI: https://doi.org/10.1007/s10854-024-12339-4
2024-03-27
Journal of Materials Science Materials in Electronics
Abstract:The metal/semiconductor triboelectric nanogenerator (TENG) is known for its minimal internal resistance, high energy collection efficiency, stability, and affordability. The focus of research has been on enhancing the performance of metal/semiconductor DC TENG and understanding the formation mechanism of its current. At present, there are few reports that specifically analyze the surface electric field and the built-in electric field separately to optimize TENG performance through adjustments to the built-in electric field. In this study, we investigate the influence of the built-in electric field on the performance of Cu/P-type GaN TENG, with carrier concentration at 1 × 10 7 cm −3 and contact area at 1.5 × 1.5 cm 2 . We modify the P-type GaN wafer structure by introducing a heterojunction to alter the strength of the built-in electric field. Our experimental results demonstrate a significant improvement in TENG performance when using a heterojunction GaN wafer2 (GaN/AlGaN/P-type GaN) in combination with a copper sheet, as compared to a homojunction GaN wafer1 (GaN/U GaN/P-type GaN) with a copper sheet. Specifically, the short circuit current ( I sc ) increases from 20 to 30 μA, and the open circuit voltage ( V oc ) increases from 8 to 15 V. Therefore, we propose a novel approach for adjusting the performance of metal/semiconductor TENG based on optimizing the built-in electric field, which has the potential to enhance the overall efficiency of these devices.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
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