Dark Current Random Telegraph Signal in Proton-Irradiated Single InGaAs Photodiodes

Marco Benfante,Jean-Luc Reverchon,Clémentine Durnez,Cédric Virmontois,Stéphane Demiguel,Vincent Goiffon
DOI: https://doi.org/10.1109/tns.2024.3413602
IF: 1.703
2024-08-21
IEEE Transactions on Nuclear Science
Abstract:In this work, we study the dark current random telegraph signal (DC-RTS) on 14.4-MeV proton-irradiated InGaAs single photodiodes. The analyzed diodes showed a two-level DC-RTS. DC-RTS amplitudes and lifetimes of the level "high" and level "low" are thermally activated. Moreover, a reverse bias dependence of the lifetimes of the levels has been observed.
engineering, electrical & electronic,nuclear science & technology
What problem does this paper attempt to address?