Abstract:Precisely vertically aligned nanorod arrays are grown over an epitaxial substrate such as boron doped ZnO (110). The 1D morphology allows for the transport of charge carriers along the longitudinal direction of nanorods. Then the naturally formed ZnO:B/Sb2Se3 heterostructure leads to the fabrication of heterojunction‐based photodetector, which shows exceeding performances. Device simulation predicts the theoretical limit of such a heterostructure for future investigation. Antimony selenide (Sb2Se3) has garnered significant attention with its extraordinary optical and optoelectronic properties for optical and optoelectronic devices such as broadband photodetectors. The trends emerge in the synthesis of Sb2Se3 over a semiconducting substrate for the direct formation of heterostructures, which facilitate a pn junction for self‐powered photodetector. 1D Sb2Se3 nanorods are preferred to boost the charge carrier transport along the longitudinal direction as well as the optical absorption by light trapping. Great challenges remain for the vertical growth of nanorods. In this work, the precisely vertical alignment of Sb2Se3 nanorod arrays has been achieved in an epitaxial growth manner by selecting a lattice‐matching substrate, namely, boron‐doped ZnO (110) surface. The directly grown boron‐doped ZnO/Sb2Se3 nanorod arrays heterostructure leads to a high‐performance broadband photodetector. Eventually, the device demonstrates extraordinary figure‐of‐merit parameters, i.e., responsivity, on/off ratio, and specific detectivity. Furthermore, device simulation predicts the theoretical limit of the photodetector performances on the condition of suppressed defect density of the Sb2Se3. These results may shed light on the investigation of controlled growth of low‐dimensional materials, self‐powered photodetectors, and related optic and optoelectronic devices.

Lateral growth of indium(III) selenide nanoribbons and their optoelectronic performance for weak signal detection

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors

High-performance polarization-sensitive photodetectors on two-dimensional β -InSe

Reconfiguring the Optical Selection Rule in Ultramicrotome‐Crafted Vertically Aligned InSe Ribbons

Highly Sensitive InSb Nanosheets Infrared Photodetector Passivated by Ferroelectric Polymer

Fabrication of High-Quality In2Se3 Nanowire Arrays Toward High-Performance Visible-Light Photodetectors.

High‐Performance Visible to Near‐Infrared Broadband Bi2O2Se Nanoribbon Photodetectors

Epitaxial Growth of Vertically Aligned Antimony Selenide Nanorod Arrays for Heterostructure Based Self‐Powered Photodetector

Single-crystalline In2S3nanowire-based Flexible Visible-Light Photodetectors with an Ultra-High Photoresponse

A high performance broadband photodetector based on (SnxSb1−x)2Se3 nanorods with enhanced electrical conductivity

Direct growth Bi2O2Se nanosheets on SiO2/Si substrate for high-performance and broadband photodetector

Solid-State Reaction Synthesis of a InSe/CuInSe 2 Lateral p–n Heterojunction and Application in High Performance Optoelectronic Devices

Solution Synthesis of Ultrathin Single-Crystalline SnS Nanoribbons for Photodetectors Via Phase Transition and Surface Processing.

Polarization‐Sensitive Photodetector Based on High Crystallinity Quasi‐1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition

High Sensitive and Broadband Photodetectors Based on Hybrid PbI2 Nanosheet/CdSe Nanobelt

High-Performance Near-Infrared Photodetectors Based on P-Type SnX (X = S, Se) Nanowires Grown Via Chemical Vapor Deposition

High-Performance Waveguide-Integrated Bi 2 O 2 Se Photodetector for Si Photonic Integrated Circuits

Oriented Layered Bi2O2Se Nanowire Arrays for Ultrasensitive Photodetectors

Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse