Abstract:The success of fabricating single layer graphene and silicon nanofilm (could be as thin as single layer so far) has triggered enormous interest in exploring their unique physics and novel applications. An intuitive idea is to investigate what happens if we construct a heterostructure composed of these two sheets. In this paper, we perform nonequilibrium molecular dynamics simulations to systematically investigate the in-plane thermal transport in graphene/silicon/graphene (Gr/Si/Gr) heterostructures. The effects of Si film thickness, interfacial interaction strength, and length on the thermal conductivity of the Gr/Si/Gr heterostructures are explicitly considered. Our simulations identify a unified scaling law for thickness dependence of thermal conductivity of the Gr/Si/Gr heterostructures, despite different interfacial interaction forms are used (weak van der Waals interaction and strong covalent bonding). By quantifying relative contribution from phonon polarizations and defining heat flux onto single atom, we reveal and fully understand the different mechanisms governing the phonon transport in the Gr/Si/Gr heterostructures for the two different interfacial interaction forms. We also found that the thermal conductivity of Gr/Si/Gr heterostructure is nonmonotonically dependent on the van der Waals interaction strength between graphene and Si, but monotonically dependent on the graphene-silicon covalent bonding strength. Moreover, length dependence study shows that phonon transport in Gr/Si/Gr heterostructure becomes diffusive at much shorter length as compared with single layer graphene and bilayer graphene. Comparing to single and double graphene layers, the thermal conductivity of the Gr/Si/Gr heterostructure can be reduced with more than one order of magnitude for very long structures. These results suggest that Gr/Si/Gr heterostructures are promising for nanoscale devices due to their unique thermal transport properties.

Effects of Interfacial Distance and Electric Field on Graphene-Silicene Hybrid Structures

Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures.

Structural, Electronic, And Optical Properties Of Hybrid Silicene And Graphene Nanocomposite

AA Bilayer Graphene on Si-terminated SiO 2 under Electric Field

The Effects Of Thermal And Electric Fields On The Electronic Structures Of Silicene

Layer k-projection and unfolding electronic bands at interfaces

Interfacial properties in planar SiC/2D metals from first principles

Graphene/g-GeC Bilayer Heterostructure: Modulated Electronic Properties and Interface Contact Via External Vertical Strains and Electric Fileds

Effects Of Interlayer Coupling And Electric Fields On The Electronic Structures Of Graphene And Mos2 Heterobilayers

Highly Sensitive Band Alignment of the Graphene/MoSi 2 N 4 Heterojunction via an External Electric Field

Thermal Conductivity of Hybrid Graphene/silicon Heterostructures

Electric Field Effect of Sliding Graphene/hexagonal Boron Nitride Heterobilayer

Deformation Effect on Graphene Quantum Dot/Graphane and Silicene Quantum Dot/Silicane array

Density functional theory based study of graphene and dielectric oxide interfaces

Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)

Stacking order effects on the energetic stability and electronic properties of $n$-doped graphene/h-BN van der Waals heterostructures on SiC(0001)

Semiconducting Graphene on Silicon from First-Principles Calculations

Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field

Silicon Intercalation at the Interface of Graphene and Ir(111)

Modulation of Electronic Properties with External Fields in Silicene-Based Nanostructures

Tuning the Electronic Structure of Silicene and Germanene by Biaxial Strain and Electric Field