Polymer-Compatible Low-Temperature Plasma-Enhanced Chemical Vapor Deposition of Graphene on Electroplated Cu for Flexible Hybrid Electronics

Chen-Hsuan Lu,Chyi-Ming Leu,Nai-Chang Yeh
DOI: https://doi.org/10.1021/acsami.1c11510
2021-08-17
Abstract:Flexible hybrid electronics and fan-out redistribution layers rely on electroplating Cu on polymers. In this work, direct low-temperature plasma-enhanced chemical vapor deposition (PECVD) of graphene on electroplated Cu over polyimide substrates is demonstrated, and the deposition of graphene is found to passivate and strengthen the electroplated Cu circuit. The effect of the H2/CH4 ratio on the PECVD graphene growth is also investigated, which is shown to affect not only the quality of graphene but also the durability of Cu. 100,000 cycles of folding with a bending radius of 2.5 mm and the corresponding resistance tests are carried out, revealing that Cu circuits covered by graphene grown with a higher H2/CH4 ratio can sustain many more bending cycles. Additionally, graphene coverage is shown to suppress the formation of copper oxides in ambient environment for at least 8 weeks after the PECVD process.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c11510.Growth chamber temperature change as a function of time during the PECVD process; Raman mapping of I(D)/I(G) at different ratios of H2/CH4; Raman mapping of I(2D)/I(G) at different ratios of H2/CH4; sample appearance before and after the PECVD process; morphology of different sample surfaces from AFM height images; HAADF-STEM image of the reference sample; XPS Cu 2p peaks of the reference sample; image of the circuit pattern; and a comparison of the resistance changes in samples after different numbers of folding cycles under different PECVD growth conditions (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
What problem does this paper attempt to address?