Abstract:The recently experimentally synthesized monolayer <math>MoSi2N4</math> and <math>WSi2N4</math> (Science 369, 670–674 (2020)) lack inversion symmetry, which allows them to become piezoelectric. In this work, based on ab initio calculations, we report structure effect on intrinsic piezoelectricity in septuple-atomic-layer <math>MSi2N4</math> (M=Mo and W), and six structures (<math>αi</math> (i=1 to 6)) are considered with the same space group. These structures can connect to each other through translation, mirror and rotation operations of double layer unit <math>Si2N2</math>. It is found that <math>MSi2N4</math> (M=Mo and W) with <math>αi</math> (i = 1 to 6) all are indirect band gap semiconductors. Calculated results show that <math>MoSi2N4</math> and <math>WSi2N4</math> monolayers have the same structural dependence on piezoelectric strain and stress coefficients (<math>d11</math> and <math>e11</math>), together with the ionic and electronic contributions to <math>e11</math>. The <math>α5</math> phase has largest <math>d11</math> for both <math>MoSi2N4</math> and <math>WSi2N4</math>, which are larger than 2.9 pm/V. Finally, we investigate the intrinsic piezoelectricity of monolayer <math>MA2Z4</math> (M=Cr, Mo and W; A=Si and Ge; Z=N and P) with<math>α1</math> and <math>α2</math> phases expect <math>CrGe2N4</math>, because they all are semiconductors and their enthalpies of formation between <math>α1</math> and <math>α2</math> phases are very close. The most important result is that monolayer <math>MA2Z4</math> containing P atom have more stronger piezoelectric polarization than one including N atom. The largest <math>d11</math> among <math>MA2N4</math> materials is 1.85 pm/V, which is close to the smallest <math>d11</math> of 1.65 pm/V in <math>MA2P4</math> monolayers. For <math>MA2P4</math>, the largest <math>d11</math> is up to 6.12 pm/V. Among the 22 monolayers, <math>α1</math>-<math>CrSi2P4,α1</math>-<math>MoSi2P4,α1</math>-<math>CrGe2P4,α1</math>-<math>MoGe2P4</math> and <math>α2</math>-<math>CrGe2P4</math> have large <math>d11</math>, which are greater than or close to 5 pm/V, a typical value for bulk piezoelectric materials. These materials are recommended for experimental exploration. Our study reveals that the <math>MA2Z4</math> family have the potential applications in piezoelectric field.

Small strain induced large piezoelectric coefficient in $α$-AsP monolayer

Intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W)

Tuning transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ with biaxial strain

Biaxial strain enhanced piezoelectric properties in monolayer g-$\mathrm{C_3N_4}$

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Large piezoelectric coefficients combined with high electron mobilities in Janus monolayer XTeI (X=Sb and Bi): a first-principle study

Equibiaxial strain regulates the electronic structure, mechanical properties, piezoelectric, and thermal transport properties of the 2H-phase monolayer CrX2 (X=S, Se, Te)

Highly Adjustable Piezoelectric Properties in Two-Dimensional LiAlTe2 by Strain and Stacking

Structure effect on intrinsic piezoelectricity in septuple-atomic-layer MSi 2 N 4 (M=Mo and W)

First-principles calculation of in-plane and out-of-plane piezoelectric properties of two-dimensional Janus MoSSiX 2 (X = N, P, As) monolayers

Tuning the electronic and piezoelectric properties of Janus Ga2XY (X/Y S, Se, Te) monolayers: A first-principles calculation

Tuning the electronic structures and transport coefficients of Janus PtSSe monolayer with biaxial strain

Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal Α-In2se3.

Strain Engineering Band Gap, Effective Mass and Anisotropic Dirac-like Cone in Monolayer Arsenene

Enhancement in electromechanical properties of piezoelectric thin film through strain-induced domain alignment

Asymmetric Behavior in Flexible Piezoelectric Strain Sensors Made of Single Zno Nanowires

Study on the piezoelectric properties and the mechanism of strain-regulated piezoelectricity in flexible Janus monolayers Cr2X3Y3 (X/Y=Cl, Br,I)

DENSITY FUNCTIONAL THEORY-BASED QUANTUM COMPUTATIONAL STRAIN ENGINEERING OF ELECTRONIC AND THERMOELECTRIC PROPERTIES OF AsXY ([math] = S, Se and [math] = Cl, Br, I) MONOLAYER

First-principles study of O-functionalized two-dimensional AsP monolayers: Electronic structure, mechanical, piezoelectric, and optical properties

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

A giant enhancement of output performance for piezotronic devices via the non-uniform piezoelectric charges induced by strain engineering