Tunneling current-controlled spin states in few-layer van der Waals magnets
ZhuangEn Fu,Piumi I. Samarawickrama,John Ackerman,Yanglin Zhu,Zhiqiang Mao,Kenji Watanabe,Takashi Taniguchi,Wenyong Wang,Yuri Dahnovsky,Mingzhong Wu,TeYu Chien,Jinke Tang,Allan H. MacDonald,Hua Chen,Jifa Tian
DOI: https://doi.org/10.1038/s41467-024-47820-5
2024-10-25
Abstract:Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI3. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI3, depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing.
Mesoscale and Nanoscale Physics,Materials Science