Abstract:Today's state of the art precision experiments in quantum, gravimetry, navigation, time keeping, and fundamental science have strict requirements on the level and spectral distribution of laser frequency noise. For example, the laser interaction with atoms and qubits requires ultra-low frequency noise at multiple offset frequencies due to hyperfine atomic transitions, motional sidebands, and fast pulse sequencing. Chip-scale integration of lasers that meet these requirements is essential for reliability, low-cost, and weight. Here, we demonstrate a significant advancement in atomic precision light sources by realizing a chip-scale, low-cost, 780 nm laser for rubidium atom applications with record-low 640 mHz (white noise floor at 0.2 Hz$^2$/Hz) fundamental and 732 Hz integral linewidths and a frequency noise that is multiple orders of magnitude lower than previous hybrid and heterogeneous self-injection locked 780 nm lasers and lower noise than bulk microresonator implementations. The laser is a Fabry-Pérot laser diode self-injection locked to an ultra-high Q photonic integrated silicon nitride resonator. This performance is enabled by a 145 million resonator Q with a 30 dB extinction ratio, the highest Q at 780 nm, to the best of our knowledge. We analyze the impact of our frequency noise on specific atomic applications including atomic frequency references, Rydberg quantum gates, and cold atom gravimeters. The photonic integrated resonator is fabricated using a CMOS foundry-compatible, wafer-scale process, with demonstrated integration of other components showing promise for a full system-on-a-chip. This performance is scalable to other visible atomic wavelengths, opening the door to a variety of transitions across many atomic species and enabling low-power, compact, ultra-low noise lasers impacting applications including quantum sensing, computing, clocks and more.

Single-frequency mid-infrared chip laser with a sub-hertz Lorentzian linewidth

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Coherent mode-combined ultra-narrow-linewidth single-mode micro-disk laser

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

A Chip-Based, 1 Hz Integrated Linewidth Laser

Chip-based Laser with 1-Hertz Integrated Linewidth

Widely tunable and narrow linewidth chip-scale lasers from deep visible to near-IR

Widely tunable and narrow-linewidth chip-scale lasers from near-ultraviolet to near-infrared wavelengths

Ultralow noise miniature external cavity semiconductor laser

Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

Sub-hertz fundamental linewidth photonic integrated Brillouin laser

Chip-Scale, Sub-Hz Fundamental Sub-kHz Integral Linewidth 780 nm Laser through Self-Injection-Locking a Fabry-Pérot laser to an Ultra-High Q Integrated Resonator

Sub-Hz fundamental, sub-kHz integral linewidth self-injection locked 780 nm hybrid integrated laser

Tunable Self-Injected Fabry-Perot Laser Diode Coupled to an External High-Q Si3N4/SiO2 Micro-Ring Resonator

Tunable narrow linewidth chip-scale mid-IR laser

Sub-100 Hz Intrinsic Linewidth 852 nm Silicon Nitride External Cavity Laser

Dual-microcavity narrow-linewidth Brillouin laser

Narrow Linewidth, Widely Tunable Integrated Lasers from Visible to Near-IR

Ultralow-noise frequency-agile photonic integrated lasers

Study on the Single-Longitudinal-mode Dual-Frequency Microchip Laser for Photonic Generation of Millimeter-Wave Signal