Abstract:Neuromorphic and in-memory computing architectures using emerging nonvolatile memories (e-NVMs) have emerged as promising solutions for area- and energy-efficient deep neural network (DNN) accele- rators. However, the inherent nonideal behavior of e-NVMs such as limited tuning precision (for multibit synapses), nonlinearity, temporal (cycle-to-cycle), and spatial (device-to-device) variability significantly degrades the performance of DNN accelerators. Recently, binary neural networks (BNNs), with 1-bit weights and activations, have been shown to offer an alternative relaxed approach for training and inference with high accuracy. However, the limited endurance and stuck-at faults of e-NVMs such as resistive (R)RAMs, charge trap memory, and so on limit the efficient implementation of BNN accelerators. Considering the ultrahigh endurance, ultralow switching energy, and CMOS-compatibility of the ferroelectric (Fe)FETs, it becomes imperative to explore their potential for BNN accelerators. To this end, in this work, we present a novel approach for the implementation of BNN inference accelerators utilizing an array of dual-port ferroelectric FETs (FeFETs) as current sinks. The dual-port FeFETs not only decouple the read and write paths (leading to reduced read disturbances) but also exhibit high reliability and voltage compatibility with existing peripheral circuit design since the write voltages are low. Furthermore, we utilize a comparator column approach that requires only half area when compared to other differential weights-based BNN accelerators. Our comprehensive analysis utilizing an experimentally calibrated compact model for dual-port FeFETs indicates that the proposed vector-matrix-multiplication (VMM) implementation exhibits an energy efficiency of 789.89 TOPS/W with a throughput of 0.06 TeraOp/s while achieving an accuracy of 96.39% and 80.8% for image classification task on the MNIST and Fashion MNIST datasets after ex-situ training.

Design space exploration of Ferroelectric FET based Processing-in-Memory DNN Accelerator

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

Design and Optimization of FeFET Based CiM for Neural Network Acceleration

Comparative Evaluation of Memory Technologies for Synaptic Crossbar Arrays -- Part I: Robustness-driven Device-Circuit Co-Design and System Implications

Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator

Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory for Binary Neural Networks

Back-end and Flexible Substrate Compatible Analog Ferroelectric Field Effect Transistors for Accurate Online Training in Deep Neural Network Accelerators

Accelerating On-Chip Training with Ferroelectric-Based Hybrid Precision Synapse

Enhancing Memory Window Efficiency of Ferroelectric Transistor for Neuromorphic Computing via Two‐Dimensional Materials Integration

Utilizing Dual-Port FeFETs for Energy-Efficient Binary Neural Network Inference Accelerators

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

Ferroelectric FET Based In-Memory Computing for Few-Shot Learning.

All-in-Memory Brain-Inspired Computing Using FeFET Synapses

Comparative Evaluation of Memory Technologies for Synaptic Crossbar Arrays- Part 2: Design Knobs and DNN Accuracy Trends

Neuromorphic Computing with Ferroelectric FinFETs in the Presence of Temperature, Process Variation, Device Aging and Flicker Noise

Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning

Efficient deep neural network accelerator using controlled ferroelectric domain dynamics

Ultra-Compact Neural Network ADC Exploiting Ferroelectric FET

Hybrid Stochastic Synapses Enabled by Scaled Ferroelectric Field-effect Transistors

An in-memory computing architecture based on a duplex 2D material structure for in-situ machine learning