Spin-orbit torques and magnetization switching in perpendicularly magnetized epitaxial Pd/Co2FeAl/MgO structures

M.S. Gabor,T. Petrisor jr.,M. Nasui,M.A. Nsibi,J. Nath,I.M. Miron

DOI: https://doi.org/10.1103/PhysRevApplied.13.054039

2019-06-28

Abstract:We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit torque MRAM devices is that they allow a unique combination of critical ingredients: i) low resistivity required for reduced electric energy consumption during writing, ii) high TMR ratio required for efficient reading and iii) strong perpendicular magnetic anisotropy for increased thermal stability.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a Spin - Orbit Torque (SOT) Magnetic Random - Access Memory (MRAM) that is highly efficient and has low energy consumption. Specifically, the researchers hope to achieve current - induced spin - orbit torque switching by using the Pd/Co2FeAl/MgO heterostructure with Perpendicular Magnetic Anisotropy (PMA). This structure can combine the following key characteristics:

1. **Low resistivity**: Reduces the power consumption during write operations.
2. **High Tunneling MagnetoResistance (TMR)**: Improves the read efficiency.
3. **Strong perpendicular magnetic anisotropy**: Enhances the thermal stability.

### Main problems and solutions

#### 1. **Limitations of existing materials**
Currently, most SOT - MRAM devices use high - resistivity heavy metals (such as Ta or W). Although these materials can provide a relatively strong spin - orbit torque, they will cause large ohmic losses and increase energy consumption. While low - resistivity heavy metals (such as Pt or Pd) can reduce energy consumption, they tend to form a (111) orientation when grown on traditional substrates, which is incompatible with the required (001) orientation and affects the realization of perpendicular magnetic anisotropy.

#### 2. **Research objectives**
To solve the above problems, the researchers proposed a new heterostructure - growing Pd/Co2FeAl/MgO thin films on (001) MgO single - crystal substrates. This structure can not only achieve (001) - oriented epitaxial growth but also effectively generate a relatively large spin - orbit torque and possess perpendicular magnetic anisotropy, thus meeting the requirements of SOT - MRAM devices.

### Experimental methods and results
The researchers prepared Pd and Co2FeAl layers with different thicknesses by magnetron sputtering and characterized the structure and magnetic properties of the samples by means of X - ray diffraction (XRD), Hall effect measurement, harmonic Hall technique, etc. The experimental results show that:

- **Structural characteristics**: The samples successfully achieved (001) - oriented epitaxial growth.
- **Spin - orbit torque characteristics**: By harmonic Hall measurement, the effective field of the spin - orbit torque was extracted, and it was found that it increased monotonically with the increase of the Pd - layer thickness and showed no sign of saturation.
- **Magnetization switching**: It was observed by magneto - optic Kerr microscopy that the current pulse could effectively induce magnetization switching in the vertically magnetized Pd/Co2FeAl/MgO heterostructure, and the switching current density was comparable to that of the traditional Pt/Co/AlOx three - layer structure.

### Conclusion
This research has proven the possibility of achieving efficient SOT switching in low - resistivity materials with the Pd/Co2FeAl/MgO heterostructure, providing a new platform for the development of low - energy - consumption and high - performance SOT - MRAM devices.