Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

fiction: An Open Source Framework for the Design of Field-coupled Nanocomputing Circuits

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

ICCAD Tutorial Session Paper Ferroelectric FET Technology and Applications: From Devices to Systems

Cross-layer Design for Computing-in-Memory

Early‐stage Microfluidic Network Design Framework Using Graph Sparsificiation Based Optimisation

Unveiling field-coupled nanocomputing: Leaning molecules to shape readable bits

A Combined N/PFET CFET-Based Design and Logic Technology Framework for CMOS Applications

Computational Electromagnetics for Nanodevices

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

CNFET-Based High Throughput SIMD Architecture

Towards a Grid-Enabled Simulation Framework for Nano-CMOS Electronics

Ferroelectric FET Based TCAM Designs for Energy Efficient Computing

New-Generation Design-Technology Co-Optimization (DTCO): Machine-Learning Assisted Modeling Framework

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Cnfet-Based High Throughput Register File Architecture

A CAD tool for design and analysis of CNFET circuits

Emerging Nanocircuit Paradigm: Graphene-based Electronics for Nanoscale Computing

On Microarchitectural Modeling for CNFET-based Circuits.

A physical design tool for carbon nanotube field-effect transistor circuits