Abstract:This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch selected regions of few-layer black phosphorus with an atomic layer accuracy. This method is deep-UV and e-beam lithography process compatible,and is free of oxygen and other common doping sources. It provides a feasible patterning approach for largescale manufacturing of few-layer BP materials and devices.

What problem does this paper attempt to address?

This paper attempts to address the problem of achieving precise atomic layer thickness control in black phosphorus (BP) materials, particularly within selected areas. Specifically, researchers face two main challenges: 1. **The difficulty of large-scale synthesis of high-quality black phosphorus crystals**: Currently, high-quality black phosphorus crystals are primarily prepared by exfoliating bulk black phosphorus crystals, making it nearly impossible to produce black phosphorus crystals with stable size and thickness on a large scale. 2. **Lack of techniques for precise control of black phosphorus atomic layers**: Although some thinning and etching methods have been reported, such as scanning tunneling microscope (STM)-based nanolithography, liquid phase thinning, femtosecond laser oxidation, thermal thinning, and plasma thinning/etching, these methods have limitations in the following aspects: - Most methods are applicable to the entire sample rather than specific areas of a single sample. - Thickness control is far from achieving atomic layer precision. - Oxidation-based thinning/etching introduces oxygen defects or surface dislocations, affecting the electronic properties and stability of black phosphorus. - Many thinning and etching methods require additional experimental conditions or equipment, making them inconvenient to operate. To overcome these challenges, this paper proposes a new wet etching process that can etch few-layer black phosphorus with atomic layer precision in selected areas and is compatible with deep ultraviolet lithography (DUV) and electron beam lithography (e-beam) processes. This method provides a feasible patterning route for the large-scale fabrication of few-layer black phosphorus materials and devices.

A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques

Alkene-Catalyzed Rapid Layer-by-Layer Thinning of Black Phosphorus for Precise Nanomanufacturing

Growth of 2D Black Phosphorus Film from Chemical Vapor Deposition.

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Study on Black Phosphorus Characteristics Using a Two-Step Thinning Method

Synthesis of thin-film black phosphorus on a flexible substrate

Thermal Sublimation: a Scalable and Controllable Thinning Method for the Fabrication of Few-Layer Black Phosphorus

Ultrafast Electrochemical Expansion of Black Phosphorus Toward High-Yield Synthesis of Few-Layer Phosphorene

Ultrafast Laser-Shock-Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films

Liquid Exfoliation of Solvent-Stabilized Few-Layer Black Phosphorus for Applications Beyond Electronics.

Progress in the synthesis of 2D black phosphorus beyond exfoliation

Large-scale growth of few-layer two-dimensional black phosphorus

An Ultrahigh Pressure Homogenization Technique for Easily Exfoliating Few-Layer Phosphorene from Bulk Black Phosphorus

Synthesis and stabilization of black phosphorus and phosphorene: recent progress and perspectives

Liquid exfoliation of solvent-stabilised black phosphorus: applications beyond electronics

Environmental instability of few-layer black phosphorus

Black Phosphorus Radio-Frequency Transistors

A clean transfer approach to prepare centimetre-scale black phosphorus crystalline multilayers on silicon substrates for field-effect transistors

Isolation and characterization of few-layer black phosphorus

Synthesis of Crystalline Black Phosphorus Thin Film on Sapphire

Electrochemical Delamination of Ultralarge Few‐Layer Black Phosphorus with a Hydrogen‐Free Intercalation Mechanism