Investigation of Dual-Layer Si-ITO-Dielectric Based Hybrid Plasmonic Electro-Absorption Modulator at 1.55 μm Wavelength

Himanshu R. Das
DOI: https://doi.org/10.1080/01468030.2024.2392099
2024-08-19
Fiber & Integrated Optics
Abstract:In this paper, a dual-layer plasmonic material-based electro-absorption modulator (EAM) is designed and investigated. Indium-tin-oxide (ITO), along with dielectric materials such as boron nitride (hBN) and hafnium dioxide (HfO 2 ), is integrated into the Si waveguide for tuning the light propagating inside the device. The device showed enhanced performance in terms of extinction ratio ( ER ) = 34.48 dB/μm, the figure of merit ( FOM ) = 493, and insertion loss ( IL ) = 0.06 dB/μm for On-state at 1.55 μm wavelength. Also, the dual-state behavior of the EAM was observed and investigated. An IL of 22.22 dB/μm and 25.39 dB/μm was observed for the Off-On and On-Off configurations, respectively. A modulation frequency ( f3dB ) of 1.72 THz and 340 GHz was achieved for the EAM with hBN and HfO 2 as the dielectric material. The investigated EAM with different dielectric materials has the potential to be integrated into future-generation photonic integrated circuits (PICs).
optics
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