Abstract:Purpose The purpose of this paper is to study the correlation between the thicknesses of the C–Ni films that have been prepared by RF-magnetron sputtering on quartz substrates and their three-dimensional (3D) micro morphology. In this work by AFM images, this paper studied stereo metric analysis of these films. Design/methodology/approach The C–Ni films have been prepared by RF-magnetron sputtering on quartz substrates using a mosaic target consisting of pure graphite and strips of pure nickel approximately 2 cm 2 attached to the graphite race track. The field emission scanning electronic microscopy (FESEM) images were used for the morphological characterization. Findings The histogram peaks are zero for all samples and the histograms are almost symmetric around zero. Temperature did not have much effect on the degree of isolation, so all four diagrams have similar results. The qualitative observations through statistical parameters of the 3D surface texture revealed that the smoothest surface has been obtained for C-Ni films annealed at 500 °C (Sa, Sq, Sz and Sv have the lower values), while the most irregular topography has been found for C-Ni films annealed at 300 °C (the fractal dimension D = 2.01 ± 0.131). Originality/value As shown in FESEM images, the size of the particles was increased for films deposited from 300 oC to 800oC; however, at 1000oC, it decreased significantly. The histogram peaks are zero for all samples and the histograms were almost symmetric around zero. Also, the largest and lowest root mean heights (Sq) belong to films at 300 °C and 500 °C. Furthermore, the more irregular surface was found at 300 °C, and the more regular surface was found at 500 °C. As the temperature was increased to 800 °C, the values of the IAPSD function increased systematically, and then the values of the IAPSD function was decreased in the fourth sample. The surface skewness of samples annealed at 1000 °C was positive which confirms the lack of dominance of cavities on their surface with the highest amount of C-Ni films at 800 °C.

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