Abstract:Aluminum nitride (AlN) is a promising ultrawide bandgap material with significant advantages for power electronics and optoelectronic applications due to its high breakdown voltage, mobility, and thermal conductivity. AlN Schottky barrier diodes (SBDs) and metal semiconductor field effect transistors (MESFETs) have shown potential but are limited by issues such as high off-state leakage current and complex structures to achieve ohmic contacts. To address these challenges, we report on the fabrication and characterization of an AlN metal oxide semiconductor field effect transistor (MOSFET) with a recessed gate structure. The source and drain contacts were fabricated on n-doped AlN epitaxy using Ti-based contacts with a Ti/Al/Ti/Au metal stack. To evaluate the performance of these contacts, a circular transmission line model (CTLM) was employed, and contacts were annealed at various temperatures ranging from 750 to 950 °C in a nitrogen ambient. Our results reveal that unannealed Ti-based contacts on AlN showed no current conduction. However, annealing these contacts at 950 °C for 30 s significantly reduced the specific contact resistance to 0.148 Ω·cm 2 , achieving an ~80% reduction compared to samples annealed at 750 °C. Utilizing these optimized contact conditions, we fabricated, to the best of our knowledge, the first AlN MOSFET. The fabricated AlN MOSFET exhibits a threshold voltage of −10.91 V, an effective mobility of 2.95 cm 2 /Vs, an on-off current ratio spanning two orders of magnitude, and a reverse breakdown voltage of approximately ~250 V in air without a field plate.

N-polar AlN buffer growth by MOVPE for transistor applications

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate

Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET

Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/ p -type GaN interface in metal–oxide–semiconductor field-effect transistor

Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Very High Channel Conductivity In Ultra-Thin Channel N-Polar Gan/(Aln, Inaln, Algan) High Electron Mobility Hetero-Junctions Grown By Metalorganic Chemical Vapor Deposition

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

The role of AlN thickness in MOCVD growth of N-polar GaN

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric