Abstract:The effect of dislocations on the chemical, electrical and transport properties in oxide materials is important for electrochemical devices, such as fuel cells and resistive switches, but these effects have remained largely unexplored at the atomic level. In this work, by using large-scale atomistic simulations, we uncover how a < 100 >{011} edge dislocation in SrTiO3, a prototypical perovskite oxide, impacts the local defect chemistry and oxide ion transport. We find that, in the dilute limit, oxygen vacancy formation energy in SrTiO3 is lower at sites close to the dislocation core, by as much as 2 eV compared to that in the bulk. We show that the formation of a space-charge zone based on the redistribution of charged oxygen vacancies can be captured quantitatively at atomistic level by mapping the vacancy formation energies around the dislocation. Oxide-ion diffusion was studied for a low vacancy concentration regime (ppm level) and a high vacancy concentration regime (up to 2.5%). In both cases, no evidence of pipe-diffusion, i.e., significantly enhanced mobility of oxide ions, was found as determined from the calculated migration barriers, contrary to the case in metals. However, in the low vacancy concentration regime, the vacancy accumulation at the dislocation core gives rise to a higher diffusion coefficient, even though the oxide-ion mobility itself is lower than that in the bulk. Our findings have important implications for applications of perovskite oxides for information and energy technologies. The observed lower oxygen vacancy formation energy at the dislocation core provides a quantitative and direct explanation for the electronic conductivity of dislocations in SrTiO3 and related oxides studied for red-ox based resistive switching. Reducibility and electronic transport at dislocations can also be quantitatively engineered into active materials for fuel cells, catalysis, and electronics.

Mechanical dissipation from charge and spin transitions in oxygen deficient SrTiO_3

Spin-texture induced by oxygen vacancies in Strontium perovskites (001) surfaces: A theoretical comparison between SrTiO3 and SrHfO3

Persistent optically induced magnetism in oxygen-deficient strontium titanate

Mechanical Control of Magnetism in Oxygen Deficient Perovskite SrTiO3.

Thermally Stimulated Relaxation and Behaviors of Oxygen Vacancies in SrTiO3 Single Crystals with (100), (110) and (111) Orientations

Observation of polarization density waves in SrTiO3

Structure and ferromagnetic instability of the oxygen-deficient SrTiO$_3$ surface

Oxygen vacancies in strained SrTiO$_{3}$ thin films: formation enthalpy and manipulation

Spin asymmetry of O 2p –related states in SrTiO 3 (001)

Dislocations In Srtio3: Easy To Reduce But Not So Fast For Oxygen Transport

Electronic spin susceptibility in metallic strontium titanate

Measurements of a low temperature mechanical dissipation peak in a single layer of Ta2O5 doped with TiO2

Temperature-dependent Resistance Switching in SrTiO3

Oxygen-Vacancy-Related High-Temperature Dielectric Relaxation In Srtio3 Ceramics

Assessment of Strain-Generated Oxygen Vacancies Using SrTiO₃ Bicrystals

The influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin films

Atomic Structure of Polar Surface in SrTiO3

Quenched lattice fluctuations in optically driven SrTiO 3

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3

Defect-Engineered Dzyaloshinskii–Moriya Interaction and Electric-Field-Switchable Topological Spin Texture in SrRuO3 (Adv. Mater. 33/2021)

Atomic-Scale Measurement of Flexoelectric Polarization at SrTiO_{3} Dislocations.