Constrained-search density functional study of quantum transport in two-dimensional vertical heterostructures

Han Seul Kim,Yong-Hoon Kim

DOI: https://doi.org/10.48550/arXiv.1808.03608

2018-08-11

Abstract:Based on a microcanonical picture that maps the steady-state quantum transport process to a drain-to-source excitation, we develop a constrained-search density functional formalism for finite-bias quantum transport calculations. By variationally minimizing the total energy of an electrode-channel-electrode system without introducing separate bulk electrode information, ambiguities in identifying its nonequilibrium electronic structure under a bias is reduced and finite electrode cases can be naturally treated. We apply the approach to vertically stacked van der Waals heterostructures made of a hexagonal boron nitride (hBN) channel sandwiched by single-layer graphene electrodes, which so far could not be treated within first-principles calculations. We find that the experimentally observed negative differential resistance originates from the hBN defect-mediated hybridizations between two graphene states, and concurrently obtain a high-bias linear current increase that was not captured in previous semiclassical treatments. Going beyond the capability of existing $ab\ initio$ nonequilibrium quantum transport simulation methods, the developed formalism will provide valuable atomistic information in the development of next-generation nanodevices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the limitations faced by the existing density - functional theory - nonequilibrium Green's function (DFT - NEGF) method in dealing with finite - bias quantum transport in vertically stacked two - dimensional heterostructures (such as structures composed of monolayer graphene electrodes and hexagonal boron nitride (hBN) channels). Specifically:

1. **Limitations of traditional methods**: The traditional DFT - NEGF method relies on the Landauer picture and needs to treat the electrodes as semi - infinite structures, replacing the Hamiltonian and related matrix elements in the electrode region with independent bulk - phase calculations. This makes it infeasible to deal with real devices with finite - size electrodes (for example, monolayer graphene electrodes).

2. **Development of new methods**: To solve the above problems, the authors developed a multi - space - constrained search density - functional theory (MS - DFT) based on the microcanonical picture. This new method allows direct treatment of finite - size electrodes, avoids introducing additional bulk - phase electrode information, thereby reducing the uncertainty of the nonequilibrium electronic structure, and can naturally handle the case of finite electrodes.

3. **Application and verification**: The authors applied MS - DFT to a vertically stacked van der Waals heterostructure composed of an hBN channel sandwiched by monolayer graphene electrodes. Through this method, they for the first time explained the negative differential resistance (NDR) phenomenon observed in experiments from first - principles, and discovered a linear increase in current at high bias, a phenomenon that could not be captured by previous semiclassical methods.

In summary, this paper aims to overcome the limitations of existing quantum - transport simulation methods in dealing with two - dimensional vertical heterostructures by developing a new theoretical framework - MS - DFT, and to provide valuable atomic - level information for the design of next - generation nano - devices.

### Formula presentation

The formulas involved in the paper are as follows:

- **Total energy minimization problem**:
\[
E_k=\min_{\rho}\left\{\int v(\vec{r})\rho(\vec{r})d^{3}\vec{r}+F[\rho_L^k,\rho_C^k,\rho_R^k,\rho_0]\right\}
\]
where $F[\rho_k,\rho_0]$ is a universal functional, defined as:
\[
F[\rho_k,\rho_0]=\min_{\Psi_L/C/R\rightarrow\rho_k}\left\langle\Psi_L/C/R\left|\hat{T}+\hat{V}_{ee}\right|\Psi_L/C/R\right\rangle
\]

- **Kohn - Sham equation**:
\[
\left(\hat{h}_0^{KS}+\Delta v_{Hxc}(\vec{r})\right)\psi_i(\vec{r})=\epsilon_i\psi_i(\vec{r})
\]

- **Transfer function**:
\[
T(E;V_b)=\text{Tr}\left[\Gamma_LG\Gamma_RG^{\dagger}\right]
\]
where $\Gamma_L(R)=i(\Sigma_L(R)-\Sigma_L^{\dagger}(R))$ is the broadening matrix caused by the electrodes.

- **Current - bias - voltage relationship**:
\[
I(V_b)=\frac{2e}{h}\int_{\mu_R}^{\mu_L}T(E;V_b)\left[f(E - \mu_R)-f(E - \mu_L)\right]dE
\]

These formulas show the core ideas and calculation steps of the MS - DFT method, ensuring an accurate description of the quantum - transport process.