Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

A superconducting absolute spin valve

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Observation of magnetic state dependent thermoelectricity in superconducting spin valves

Superconducting spin valves based on antiferromagnet/superconductor/antiferromagnet heterostructures

Electrically Controllable Van Der Waals Antiferromagnetic Spin Valve

Superconducting spintronic tunnel diode

Supramolecular Spin Valves

Spin-Valve-Controlled Triggering of Superconductivity

Valley- and spin-switch effects in molybdenum disulfide superconducting spin valve

Superconducting switching due to triplet component in the Pb/Cu/Ni/Cu/Co$_2$Cr$_{1-x}$Fe$_x$Al$_y$ spin-valve structure

Magnetic exchange interaction in spin-valve with chiral spin-triplet superconductor

Origin of the Inverse Spin Switch Effect in Superconducting Spin Valves

Electrically switchable van der Waals magnon valves

Superconducting switching due to a triplet component in the Pb/Cu/Ni/Cu/Co2Cr1 -x Fe x Al y spin-valve structure

Anti-Lenz Supercurrents in Superconducting Spin Valves

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Superconducting spin valve effect in Co/Pb/Co heterostructures with insulating interlayers

Superconducting spin-valve effect in heterostructures with ferromagnetic Heusler alloy layers