Abstract:In recent years, silver sintering has gained increasing attention in high-power density electronic packaging due to its characteristics such as a high melting point and excellent thermal and electrical conductivity. Micron-sized silver sintering offers a lower cost, but requires a longer processing time and additional pressure, which constrains its application. This paper presents a low-cost sintering process using infrared radiation (IR) as a heat source. By leveraging the unique properties of IR, the process achieves selective heating. The thermal energy can be mainly absorbed by the specific areas requiring sintering. This innovative approach eliminates the need for external pressure during the sintering process. This feature not only simplifies the overall process but also reduces the processing time required for sintering. The silver joints obtained from IR sintering process for 45 min achieved an average chip shear strength of 38 MPa at a temperature of 225 °C, which is higher than the strength of silver joints obtained from a traditional sintering process for 2 h. Additionally, the IR-sintered silver joints have a resistivity of 9.83 × 10−5 Ω·cm and scanning electron microscope (SEM) images of the joints reveal that the sintered joints obtained through the IR sintering process exhibit less porosity compared to joints obtained through a traditional sintering process. The porosity of the IR silver joints at 225 °C is 6.4% and does not change even after 3000 cycles of thermal shock testing, showing outstanding reliability. A GaN power device using IR silver joint also performed better in thermal and electrical performance testing, showing promising potential for the application of micro-silver paste in power electronic devices.

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