Structural, electronic and magnetic properties of the Manganese telluride layers AMnTe2 (A=K, Rb, Cs) from first-principles calculations

A. Benmakhlouf,Y. Bourourou,A. Bouhemadou,A. Bentabet,F. Khemloul,S. Maabed,M. Bouchenafa,I. Galanakis
DOI: https://doi.org/10.1016/j.jmmm.2018.06.002
2018-04-12
Abstract:Using first-principles electronic structure calculations based on density functional theory (DFT), we investigate the structural, electronic and magnetic properties of the layered ternary manganese tellurides: AMnTe2 (A = K, Rb, and Cs). Calculations are accomplished within the full-potential linearized augmented plane wave (FP-LAPW) using the generalized gradient approximation GGA formalism for the exchange correlation term. We have treated all ferromagnetic, antiferromagnetic and non-magnetic phases and found that the ferromagnetic is the ground-state for all studied compounds. Moreover, all three compounds under study are half-metals with a total spin magnetic per formula unit of 4 mu_B which is mainly localized at the Mn atoms. We express for these compounds a new version of the Slater-Pauling rule and discuss in detail the origin of the minority-spin gap. Finally, we have also calculated some other relevant quantities such as the bulk modulus B, the pressure derivative B', the virtual semiconducting gap Eg, and the half-metallic gap E_HM.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to systematically study and understand the structural, electronic, and magnetic properties of layered ternary manganese tellurides AMnTe₂ (A = K, Rb, Cs). Specifically, the authors hope to explore the properties of these compounds in different magnetic phases (ferromagnetic, antiferromagnetic, and non - magnetic phases) through first - principles calculations based on density functional theory (DFT), and verify whether they have half - metallic properties. ### Main problems: 1. **Structural properties**: Determine the crystal structure parameters (such as lattice constants, volume, etc.) of these compounds, and evaluate their consistency with experimental results. 2. **Electronic properties**: Analyze the band structure and density of states of these compounds to determine their electronic behavior, especially the spin polarization near the Fermi level. 3. **Magnetic properties**: Study the magnetic properties of these compounds, including the distribution of the total spin magnetic moment and the local magnetic moment, and whether there is half - metallic ferromagnetism. 4. **Slater - Pauling rule**: Explore whether these compounds follow the Slater - Pauling rule, and explain the origin of the minority - spin band gap. ### Research background: - Half - metallic materials have important application prospects in the field of spintronics due to their unique electronic structures. - Ternary manganese tellurides AMnTe₂ (A = K, Rb, Cs) have been less studied previously, especially regarding their detailed physical properties. - This study aims to fill this gap and provide a reference for future experimental and theoretical research. ### Methods: - Use the full - potential linearized augmented plane - wave (FP - LAPW) method for first - principles calculations. - Adopt the generalized gradient approximation (GGA) to deal with the exchange - correlation term. - Calculate the total energy in different magnetic phases, and obtain the bulk modulus and other related physical quantities by fitting with the Murnaghan equation. ### Conclusions: - All the studied compounds exhibit the lowest energy state in the ferromagnetic phase and are all half - metallic ferromagnets. - The total spin magnetic moment is 4 μB/ formula unit, mainly localized on Mn atoms. - A new version of the Slater - Pauling rule applicable to these compounds is proposed, and the origin of the minority - spin band gap is discussed in detail. Through these studies, the authors hope to increase the interest in this type of half - metallic ferromagnet and provide theoretical support for its potential applications.