Abstract:The chemical binding of pyrrolidine on Si(111)-7 x 7 was studied using high-resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), and DFT calculation, to obtain a thorough mechanistic understanding of the formation of dative bonds of nitrogen-containing organic molecules on semiconductor surfaces. This study focuses on the electronic and geometric structures of the surface reactive sites. XPS of a chemisorbed monolayer suggests two adsorbates (beta 1 and beta 2) associated with the formation of a N center dot center dot center dot Si-ad dative bond. At low exposure, the adsorbate beta 1 forms a dative bond as indicated by a higher N1s binding energy compared to the Si-N sigma bond in the dissociated product formed at 250 K. At higher exposure, the formation of the second N center dot center dot center dot Si-ad dative bond in adsorbate beta 2 was evidenced by an obvious upshift of the N1s core-level in contrast to that observed for physisorbed molecules or Si-N sigma-bonded molecules. Vibrational studies show a down-shift of the N-H stretching frequency by similar to 95 cm(-1) upon the formation of the N center dot center dot center dot Si-ad dative bond in contrast to the free pyrrolidine molecule, providing new evidence for the dative bonding between amines and silicon surfaces. These studies suggest that the beta 2 state is an adsorbate directly bonded to the silicon surface adatom via the formation of a N center dot center dot center dot Si-ad dative bond, and the beta 1 state is an adsorbate which forms a N center dot center dot center dot Si-ad dative bond with an adatom and a weak N-H center dot center dot center dot Si-re hydrogen bond with an adjacent electron-rich rest atom. In the beta 1 adsorbate, both electron acceptance by the adatom and electron donation by the rest atom occur simultaneously with one pyrrolidine molecule through dative bonding and hydrogen bonding, respectively. The extra electron-deficient adatom sites on Si(111)-7 x 7 provide an opportunity for forming a second dative bond after the formation of the first in contrast to Ge(100) and Si(100) where the number of electron-deficient and electron-rich sites are equivalent. The difference in electronic and geometric structures of the reactive sites on different semiconductor surfaces offers a useful channel to shape reactivity and selectivity of organic functional groups on silicon surfaces.

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