Abstract:Experimental setups for charge transport measurements are typically not compatible with the ultra-high vacuum conditions for chemical doping, limiting the charge carrier density that can be investigated by transport methods. Field-effect methods, including dielectric gating and ionic liquid gating, achieve too low a carrier density to induce electronic phase transitions. To bridge this gap, we developed an integrated flip-chip method to dope graphene by alkali vapour in the diffusive regime, suitable for charge transport measurements at ultra-high charge carrier density. We introduce a cesium droplet into a sealed cavity filled with inert gas to dope a monolayer graphene sample by the process of cesium atom diffusion, adsorption and ionization at the graphene surface, with doping beyond an electron density of $4.7\times10^{14}~\mathrm{cm}^{-2}$ monitored by operando Hall measurement. The sealed assembly is stable against oxidation, enabling measurement of charge transport versus temperature and magnetic field. Cyclotron mass inversion is observed via the Hall effect, indicative of the change of Fermi surface geometry associated with the Liftshitz transition at the hyperbolic $M$ point of monolayer graphene. The transparent quartz substrate also functions as an optical window, enabling non-resonant Raman scattering. Our findings show that chemical doping, hitherto restricted to ultra-high vacuum, can be applied in a diffusive regime at ambient pressure in an inert gas environment and thus enable charge transport studies in standard cryogenic environments

Flip-chip gate-tunable acoustoelectric effect in graphene

Gate-tunable quantum acoustoelectric transport in graphene

Acoustoelectric transport at gigahertz frequencies in coated epitaxial graphene

Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene

Controlling the properties of surface acoustic waves using graphene

Interaction of surface acoustic waves with electronic excitations in graphene

Giant Phonon-Induced Conductance in Scanning Tunnelling Spectroscopy of Gate-Tunable Graphene

Acoustic charge transport induced by the surface acoustic wave in chemical doped graphene

Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

Charge pumping in hBN-encapsulated graphene driven by surface acoustic waves

Performance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout

Exploiting Aharonov-Bohm oscillations to probe Klein tunneling in tunable pn-junctions in graphene

Low-field magnetotransport in graphene cavity devices.

Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point

Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping

Acoustically Induced Giant Synthetic Hall Voltages in Graphene

Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

Raman Scattering and Tunable Electron–phonon Coupling in Single Layer Graphene

Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene

Electrically-driven amplification of terahertz acoustic waves in graphene

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.