Abstract:One-dimensional metallic transition-metal chalcogenide nanowires (TMC-NWs) hold promise for interconnecting devices built on two-dimensional (2D) transition-metal dichalcogenides, but only isotropic growth has so far been demonstrated. Here we show the direct patterning of highly oriented Mo6Te6 NWs in 2D molybdenum ditelluride (MoTe2) using graphite as confined encapsulation layers under external stimuli. The atomic structural transition is studied through in-situ electrical biasing the fabricated heterostructure in a scanning transmission electron microscope. Atomic resolution high-angle annular dark-field STEM images reveal that the conversion of Mo6Te6 NWs from MoTe2 occurs only along specific directions. Combined with first-principles calculations, we attribute the oriented growth to the local Joule-heating induced by electrical bias near the interface of the graphite-MoTe2 heterostructure and the confinement effect generated by graphite. Using the same strategy, we fabricate oriented NWs confined in graphite as lateral contact electrodes in the 2H-MoTe2 FET, achieving a low Schottky barrier of 11.5 meV, and low contact resistance of 43.7 Ω µm at the metal-NW interface. Our work introduces possible approaches to fabricate oriented NWs for interconnections in flexible 2D nanoelectronics through direct metal phase patterning.

Tailoring the epitaxial growth of oriented Te nanoribbon arrays

Fabrication of MoSe 2 nanoribbons via an unusual morphological phase transition

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

Electronic Structures of Ultra-Thin Tellurium Nanoribbons.

Facile and Fast Growth of High Mobility Nanoribbons of ZrTe5

Lithography-free, high-density MoTe2 nanoribbon arrays

Phase-engineered synthesis of atomically thin te single crystals with high on-state currents

Controllable synthesis of high-quality two-dimensional tellurium by a facile chemical vapor transport strategy

Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene

Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism

Substrate Engineering-Tailored Fabrication of Aligned Graphene Nanoribbon Arrays: Implications for Graphene Electronic Devices

Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides

Epitaxial growth of inch-scale single-crystal transition metal dichalcogenides through the patching of unidirectionally orientated ribbons

Electronics and Optoelectronics Based on Tellurium

Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches

Morphology controlled synthesis of one-dimensional BTR micro-ribbons and two-dimensional single-crystal films for field-effect transistors

Understanding the anisotropic growth of VS grown PbSnTe nanowires

Tailoring the electrical properties of tellurium nanowires via surface charge transfer doping

Biomimetic wafer-scale alignment of tellurium nanowires for high-mobility flexible and stretchable electronics

Tailoring the Dimensionality of Tellurium Nanostructures via Vapor Transport Growth

Ultra-Narrow TaS2 Nanoribbons