Abstract:Using first principle calculations we examine properties of (Cd,V)Te, (Cd,Cr)Te, (Hg,V)Te, and (Hg,Cr)Te relevant to the quantum anomalous Hall effect (QAHE), such as the position of V- and Cr- derived energy levels and the exchange interactions between magnetic ions. We consider CdTe and HgTe, containing 12.5% of cation-substitutional V or Cr ions in comparison to the well-known case of (Cd,Mn)Te and (Hg,Mn)Te, and examine their suitability for the fabrication of ferromagnetic barriers or ferromagnetic topological quantum wells, respectively. To account for the strong correlation of transition metal d electrons we employ hybrid functionals with different mixing parameters aHSE focusing on aHSE = 0.32, which better reproduces the experimental band gaps in HgTe, CdTe, Hg0.875Mn0.125Te, and Cd0.875Mn0.125Te. We find that Cr, like Mn, acts as an isoelectronic dopant but V can be an in-gap donor in CdTe and a resonant donor in HgTe, similar to the case of Fe in HgSe. From the magnetic point of view, Cr-doping results in a ferromagnetic phase within the general gradient approximation (GGA) but interactions become antiferromagnetic within hybrid functionals. However, (Hg,V)Te is a ferromagnet within both exchange-correlation functionals in a stark contrast to (Hg,Mn)Te for which robust antiferromagnetic coupling is found theoretically and experimentally. Furthermore, we establish that the Jahn-Teller effect is relevant only in the case of Cr-doping. Considering lower defect concentrations in HgTe-based quantum wells compared to (Bi,Sb)3Te2 layers, our results imply that HgTe quantum wells or (Cd,Hg)Te barriers containing either V or Cr show advantages over (Bi,Sb,Cr,V)3Te2-based QAHE systems but whether (i) ferromagnetic coupling will dominate in the Cr case and (ii) V will not introduce too many electrons to the quantum well is to be checked experimentally

Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Quantum Hall effect and zero plateau in bulk HgTe

Energy spectrum of valence band in HgTe quantum wells on the way from a two to the three dimensional topological insulator

Quantum Spin Hall Insulator State in HgTe Quantum Wells

Quantum Hall effect and current distribution in the 3D topological insulator HgTe

Effect of Magnetic Field on Electron Transport in HgTe/CdTe Quantum Wells: Numerical Analysis

Thouless Conductances of a Three-Dimensional Quantum Hall System

Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures

Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells.

ROBUST TRANSPORT OF QUANTUM SPIN HALL STATE IN HgTe/CdTe QUANTUM WELL

Fractional Quantum Hall Effects in HgTe Quantum Wells

Role of magnetic doping in topological HgTe and application of the Gram-Schmidt method for computing impurity states in quantum wells

Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well

Numerical Study of Localization in Quantum Spin Hall State of HgTe/CdTe System

CdTe and HgTe doped with V, Cr, and Mn -- prospects for the quantum anomalous Hall effect

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

Two-dimensional topological Anderson insulator in a HgTe-based semimetal

Inverse Spin Hall Effect in a HgTe Quantum Well

Interplay of Chiral and Helical States in a Quantum Spin Hall Insulator Lateral Junction

High-frequency breakdown of the integer QHE in GaAs/AlGaAs heterojunctions