Abstract:In strongly disordered HgTe quantum wells with a semimetallic spectrum we have experimentally discovered Anderson localization of two-dimensional (2D) electrons and holes in the bulk of the quantum well, exhibiting an exponentially strong increase in resistance as the temperature decreases. Conversely, for the one-dimensional (1D) edge current states we observed a very weak temperature dependence of the resistance, indicating the absence of localization. Initially the system is a bulk conductor, but a strong disorder opens the mobility gap in the bulk, which leads to the formation of a 2D topological Anderson insulator (TAI) state. This state turned out to be very sensitive to the applied perpendicular to the system's plane magnetic field. Firstly, a small magnetic field of 30mT breaks the topological protection of 1D edge channels turning the system into an ordinary Anderson insulator. Secondly, the magnetic field of 0.5T delocalizes 2D bulk electrons, transitioning the system into a quantum Hall liquid.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to realize the two - dimensional topological Anderson insulator (2D TAI) state in strongly disordered HgTe quantum wells and study its properties under different conditions. Specifically, the author focuses on the following aspects: 1. **Anderson Localization**: In strongly disordered HgTe quantum wells, two - dimensional electrons and holes show strong Anderson localization at low temperatures, resulting in an exponential increase in resistance as the temperature decreases. In contrast, the resistance of one - dimensional edge - current states has a very weak dependence on temperature, indicating no localization phenomenon. 2. **Topological Protection**: The author explores the differences between two - dimensional bulk states and one - dimensional edge states in terms of Anderson localization. Although bulk - state electrons and holes are affected by localization, the edge states remain conductive due to topological protection. 3. **Magnetic Field Influence**: The influence of an externally applied perpendicular magnetic field on the 2D TAI state has been studied. A small magnetic field (about 30 mT) destroys the topological protection of the edge states, causing the system to transform into an ordinary Anderson insulator. A higher magnetic field (about 0.5 T) delocalizes the two - dimensional bulk - state electrons, and the system transforms into a quantum Hall liquid. 4. **New Type of 2D TI**: Based on these experimentally observed phenomena, the author proposes a new type of 2D TI - the 2D topological Anderson insulator, in which the bulk state is replaced by a localized band instead of the traditional energy gap. The main contribution of the paper lies in directly confirming for the first time the fundamental differences in Anderson localization between the bulk states and edge states of the inverted - band structure in semiconductor quantum wells, thus providing a new perspective for understanding the properties of topological insulators.

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