Quantum Hall effect and zero plateau in bulk HgTe

M. L. Savchenko,D. A. Kozlov,S. S. Krishtopenko,N. N. Mikhailov,Z. D. Kvon,A. Pimenov,D. Weiss

2024-09-14

Abstract:The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of Rxx of the order of h/e^2, is found around the point of charge neutrality. It is shown that the zero plateau is formed by the counter-propagating chiral electron-hole edge channels, the scattering between which is suppressed. So, phenomenologically, the quantum spin Hall effect is reproduced, but with preserved ballisticity on macroscopic scales (larger than 1mm). It is shown that the formation of the QHE occurs in a two-dimensional (2D) accumulation layer near the gate, while the bulk carriers play the role of an electron reservoir. Due to the exchange of carriers between the reservoir and the 2D layer, an anomalous scaling of the QHE is observed not with respect to the CNP, but with respect to the first electron plateau.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the observation of the Quantum Hall Effect (QHE) and its related zero - plateau phenomenon in three - dimensional (3D) HgTe thin films. Specifically, the research focuses include:

1. **Achieving QHE in 3D systems**: Usually, QHE is observed in two - dimensional (2D) systems, and achieving QHE in 3D materials is a new challenge. By studying 1000 - nanometer - thick HgTe thin films, the author explored the possibility of achieving QHE in 3D systems.

2. **Zero - plateau phenomenon**: The paper pays special attention to the zero - plateau phenomenon that occurs near the Charge Neutrality Point (CNP), that is, the phenomenon where the Hall resistance (\(\rho_{xy}\)) is zero and the longitudinal resistance (\(\rho_{xx}\)) is relatively small. This phenomenon is rare in other systems, and its formation mechanism is still unclear.

3. **Interaction between 2D and 3D carriers**: The author studied the interaction between carriers in the 2D accumulation layer and 3D bulk carriers, and how these interactions affect the formation of QHE. Especially under high magnetic fields, 3D bulk carriers are gradually localized, and 2D carriers dominate the transport characteristics.

4. **Quasi - ballistic edge channels**: The paper also explored the quasi - ballistic edge channels formed on a macroscopic scale (greater than 1 millimeter), which is a phenomenon that has not been reported in previous studies. This quasi - ballistic transport property makes this system an important candidate for studying electron - hole edge - channel interactions and possible exciton formation.

5. **Anomalous scaling behavior**: The author observed the anomalous scaling behavior of QHE, not relative to the CNP, but relative to the first electron platform. This indicates that there are unique physical mechanisms in this system.

In summary, this paper aims to reveal the specific mechanism of achieving QHE in 3D HgTe thin films, especially the formation of the zero - plateau phenomenon and the physical mechanism behind it, and at the same time explore the influence of the interaction between 2D and 3D carriers on QHE.