Abstract:Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of these devices in integrated circuits. From a sensitivity perspective, an ideal switch should have a high sensitivity to the gate voltage and lower sensitivity to the device design parameters like oxide and body thicknesses. In this work, conventional tunnel-FET (TFET) and negative capacitance FET are shown to suffer from high sensitivity to device design parameters using full-band atomistic quantum transport simulations and analytical analysis. Although Dielectric Engineered (DE-) TFETs based on 2D materials show smaller sensitivity compared with the conventional TFETs, they have leakage issue. To mitigate this challenge, a novel DE-TFET design has been proposed and studied.

What problem does this paper attempt to address?

This paper attempts to address the sensitivity challenges faced by steep transistors when applied to integrated circuits. Specifically, steep transistors are of great significance in reducing the power consumption of integrated circuits, but it is experimentally difficult to achieve the steep characteristics beyond the Boltzmann limit, which hinders their promotion in practical applications. ### Main issues: 1. **Steepness and power consumption**: - Traditional MOSFETs, limited by the Boltzmann limit, have deteriorated switching characteristics (such as ON/OFF current ratio) when operating at low supply voltages (\( V_{DD} \)). Therefore, developing steep transistors that exceed the Boltzmann limit is crucial for reducing power consumption and improving the performance of CPUs and VLSIs. 2. **Sensitivity of design parameters**: - An ideal switching device should be highly sensitive to the external gate voltage (\( V_G \)) and insensitive to other design parameters (such as oxide layer thickness, channel thickness, etc.). However, existing tunnel field - effect transistors (TFETs) and negative - capacitance field - effect transistors (NCFETs) are highly sensitive to these design parameters, resulting in unstable performance. - The paper studies the sensitivity of these devices to design parameters through analysis and simulation, and proposes a relative instability index \( \Omega \) to quantify this sensitivity: \[ I_R=\frac{I_{ON}}{I_{OFF}} \] \[ \Omega = \frac{\sum_{i\neq V_G}w_i\frac{\partial\ln(I_R)}{\partial\ln(p_i)}}{\frac{\partial\ln(I_R)}{\partial\ln(V_G)}} \] where \( p_i \) is any design parameter other than the gate voltage, and \( w_i \) is a weighting factor. 3. **New design challenges**: - Although dielectric - engineered TFETs (DE - TFETs) based on two - dimensional materials show lower sensitivity, they have leakage problems. To this end, the paper proposes a new DE - TFET design to alleviate this problem. ### Conclusion: Through analytical models and full - band quantum transport simulations, the paper reveals that while steep transistors increase the steepness of the I - V response, they also increase the sensitivity to other design parameters. Although MOSFETs in III - V materials perform better and are more stable, in two - dimensional materials, DE - TFETs exhibit higher performance and lower sensitivity. In addition, to address the leakage problem of DE - TFETs, the paper proposes a work - function engineering method, and the improved WDE - TFET has comparable performance to DE - TFET. In summary, this paper aims to address the challenges of steep transistors in design parameter sensitivity and practical applications, providing new solutions for future high - performance, low - power integrated circuits.

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