Growth and characterization of BaZnGa

Na Hyun Jo,Qisheng Lin,Manh Cuong Nguyen,Udhara S. Kaluarachchi,Wiliam R. Meier,Soham Manni,Savannah S. Downing,Anna E. Böhmer,Tai Kong,Yang Sun,Valentin Taufour,Cai-Zhuang Wang,Kai-Ming Ho,Sergey L. Bud'ko,Paul C. Canfield
DOI: https://doi.org/10.1080/14786435.2017.1380861
2017-07-12
Abstract:We report the growth, structure and characterization of BaZnGa, identifying it as the sole known ternary compound in the Ba-Zn-Ga system. Single crystals of BaZnGa can be grown out of excess Ba-Zn and adopt a tI36 structure type. There are three unique Ba sites and three M\,=\,Zn/Ga sites. Using DFT calculations we can argue that whereas one of these three M sites is probably solely occupied by Ga, the other two M sites, most likely, have mixed Zn/Ga occupancy. Temperature dependent resistivity and magnetization measurements suggest that BaZnGa is a poor metal with no electronic or magnetic phase transitions between 2\,K and 300\,K.
Materials Science
What problem does this paper attempt to address?