Abstract:The first quaternary Zintl phase Ba8Zn2–xIn3+xBi10 (x = 0.21–0.47) was synthesized by reacting the elements at high temperature and, its crystal structure determined from single crystal X-ray diffraction data. It crystallizes in the monoclinic space group C2/m, with a large unit cell volume, V = 3351.3(6) Å3 (Z = 4), which is a new structure type. The basic structural building blocks are MBi4 tetrahedra (M = In or Zn/In mix) that are condensed by sharing corners when mainly centered by In atom, or corners and edges when mainly centered by Zn atom. In turn, these tetrahedra form two markedly distinct one-dimensional (1-D) polyanionic substructures, defining two virtually distinct sub-structures. Corollary, the title structure can be viewed as an intergrowth of two imaginary quaternary phases (1A) “Ba3Zn1–yIn1+yBi4” and (1B) “Ba5Zn1–zIn2+zBi6” (with x = y+z). The polyanionic system in the 1A block, [Zn1–yIn1+yBi4]6– consists of dimeric pentagonal rings that are stacked to form double pentagonal tubes running in the b-direction, and filled with Ba cations. The polyanion in the 1B block, [Zn1–zIn2+zBi6]6– consists of large ribbons formed by the condensation of two strands of dimeric corner sharing infinite chains of [InBi4] tetrahedra with one chain of edge-sharing [ZnBi4] tetrahedra. The Zn/In atomic site preferences appeared to be one decisive factor behind the structural complexity and, it seems to be directed mainly by the atomic valence states and sizes, as well as the electrostatic factors, aiming to optimize the lattice reticular energy, as confirmed by total energy calculations on three ordered models using DFT methods. According to the Zintl-Klemm concept (ZKC) and the 8–N rules, the compound should be charge balanced for x = 0. Therefore, the experimentally observed phase width (x = 0.21 to 0.47) indicates that the system is amenable for substantial (n- or p-type) doping, to fine tune their transport properties, like the charge carrier concentration and charge mobility, via specific chemical substitutions at specific sites of the two polyanionic blocks. The DFT electronic band structure calculations on the hypothetical fully ordered model ‘Ba8Zn2In3Bi10’ (x = 0), also predicted the title compound to be a semiconductor with narrow band gap. Therefore, the title phase fully qualified as a promising thermoelectric material candidate.

A novel ternary bismuthide, NaMgBi: crystal and electronic structure and electrical properties

The Ternary Alkaline-Earth Metal Manganese Bismuthides Sr2MnBi2 and Ba2Mn1–xBi2 (x ≈ 0.15)

Crystal and electronic structure of the ternary Zintl bismuthide BaLiBi

Synthesis and Crystal Structures of La{sub 3}mgbi{sub 5} and LaLiBi{sub 2}

Synthesis, Crystal and Electronic Structures, and Magnetic and Electrical Transport Properties of Bismuthides NdZn0.6Bi2 and (La0.5RE0.5)Zn0.6Bi2 (RE = Pr or Nd)

Crystal and Electronic Structure of Ternary Bismuthides BaTM1.8Bi2 (TM = Au, Ag) with a New Variation of the BaAu2Sb2 Structure Type

Crystal Structure and Physical Properties of the New Ternary Compound Mgni7b3

Bismuth as a Reactive Solvent in the Synthesis of Multicomponent Transition-Metal-Bearing Bismuthides

Ternary Bismuthide SrPtBi2: Computation and Experiment in Synergism to Explore Solid-State Materials

Ba11cd8bi14: Bismuth Zigzag Chains in A Ternary Alkaline-Earth Transition-Metal Zintl Phase

First-principles Prediction of Structure, Mechanical and Thermodynamic Properties of BixGeyOz Ternary Bismuth Crystals

Single-crystal structure determination of two new ternary bismuthides: Rh6Mn5Bi18 and RhMnBi3

Synthesis, Crystal and Electronic Structures, and Magnetic and Electrical Transport Properties of Bismuthides NdZn 0.6 Bi 2 and (La 0.5 RE 0.5 )Zn 0.6 Bi 2 (RE = Pr or Nd)

Structures and Properties of Binary Mg Bi Compounds under Pressure

A(2)Bi(8)Se(13) (A = Rb, Cs), Csbi3.67se6, and Babi2se4: New Ternary Semiconducting Bismuth Selenides

ChemInform Abstract: Crystal Structure and Physical Properties of the New Ternary Compound MgNi7B3.

Temperature-dependent Crystallographic Studies and Electronic Structure of Ba{sub 2}cd{sub 3}bi{sub 4}

Dibarium Tricadmium Bismuthide(-I,-iii) Oxide, Ba2Cd3−δBi3O

The First Quaternary Bismuthide Zintl Phase Ba8Zn2-xIn3+xBi10 with complex Crystal Structure

Enhancement of the Thermoelectric Properties of Zintl Phase SrMg2Bi2 by Na-doping.

Thermoelectric Properties of Zintl Compound Ca1−xNaxMg2Bi1.98