Abstract:The recently demonstrated electroluminescence of color centers in diamond makes them one of the best candidates for room temperature single-photon sources. However, the reported emission rates are far off what can be achieved by state-of-the-art electrically driven epitaxial quantum dots. Since the electroluminescence mechanism has not yet been elucidated, it is not clear to what extent the emission rate can be increased. Here we develop a theoretical framework to study single-photon emission from color centers in diamond under electrical pumping. The proposed model comprises electron and hole trapping and releasing, transitions between the ground and excited states of the color center as well as structural transformations of the center due to carrier trapping. It provides the possibility to predict both the photon emission rate and the wavelength of emitted photons. Self-consistent numerical simulations of the single-photon emitting diode based on the proposed model show that the photon emission rate can be as high as 100 kcounts s$^{-1}$ at standard conditions. In contrast to most optoelectronic devices, the emission rate steadily increases with the device temperature achieving of more than 100 Mcount s$^{-1}$ at 500 K, which is highly advantageous for practical applications. These results demonstrate the potential of color centers in diamond as electrically driven non-classical light emitters and provide a foundation for the design and development of single-photon sources for optical quantum computation and quantum communication networks operating at room and higher temperatures.

Dynamics of single-photon emission from electrically pumped color centers

Ultrabright single-photon source on diamond with electrical pumping

High Purcell Factor Generation of Indistinguishable On-Chip Single Photons

Electrical excitation of color centers in phosphorus-doped diamond Schottky diodes

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Solid-State Color Centers for Single-Photon Generation

Quantum Photonics Incorporating Color Centers in Silicon Carbide and Diamond

High-efficiency single photon emission from a silicon T-center in a nanobeam

Imaging dark charge emitters in diamond via carrier-to-photon conversion

Silicon-vacancy color centers in phosphorus-doped diamond

Modeling of radiative emission from shallow color centers in single crystalline diamond

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Tailoring of Typical Color Centers in Diamond for Photonics

Single-photon emission from Ni-related color centers in CVD diamond

Bright single photon sources in lateral silicon carbide light emitting diodes

Single-photon emission from silicon-vacancy color centers in polycrystalline diamond membranes

Giant Quantum Electrodynamic Effects on Single SiV Color Centers in Nanosized Diamonds

Preparations and applications of single color centers in diamond

A new, enhanced diamond single photon emitter in the near infra-red

Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications

Electrical Manipulation of Telecom Color Centers in Silicon