Abstract:The total ionizing dose (TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson's equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal-oxide-semiconductor (MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO2 interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages.

Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Compact SPICE Modeling of Total Ionizing Dose for Shield Gate Trench MOSFET

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

Electromagnetic Compatibility in Leakage Current of CMOS Integrated Circuits

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

Incorporation of total ionizing dose effects into a compact model for p-GaN gate high electron mobility transistors

Full-Chip Leakage Analysis In Nano-Scale Technologies: Mechanisms, Variation Sources, And Verification

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Modeling and Analysis of Loading Effect in Leakage of Nano-Scaled Bulk-CMOS Logic Circuits

Full-Chip Leakage Verification for Manufacturing Considering Process Variations

Three-Dimensional Simulation of Total Dose Effects on Ultra-Deep Submicron Devices

Accurate and Fast Table Look-Up Models for Leakage Current Analysis in 65 Nm CMOS Technology

Total-Ionizing-Dose Radiation-Induced Electric Field Redistribution Model and Hardening Method for SGT MOSFET

Study of the Dose Rate Effect of 180 Nm Nmosfets