Deposition of defected graphene on (001) Si substrates by thermal decomposition of acetone

T.I. Milenov,I. Avramova,E. Valcheva,G.V. Avdeev,S. Rusev,S. Kolev,I. Balchev,I. Petrov,D. Pishinkov,V.N. Popov

DOI: https://doi.org/10.1016/j.spmi.2017.04.042

2017-04-12

Abstract:We present results on the deposition and characterization of defected graphene by the chemical vapor deposition (CVD) method. The source of carbon/carbon-containing radicals is thermally decomposed acetone (C2H6CO) in Ar main gas flow. The deposition takes place on (001) Si substrates at about 1150-11600C. We established by Raman spectroscopy the presence of single- to few- layered defected graphene deposited on two types of interlayers that possess different surface morphology and consisted of mixed sp2 and sp3 hybridized carbon. The study of interlayers by XPS, XRD, GIXRD and SEM identifies different phase composition: i) a diamond-like carbon dominated film consisting some residual SiC, SiO2 etc.; ii) a sp2- dominated film consisting small quantities of C60/C70 fullerenes and residual Si-O-, C=O etc. species. The polarized Raman studies confirm the presence of many single-layered defected graphene areas that are larger than few microns in size on the predominantly amorphous carbon interlayers.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to deposit defective graphene on (001) silicon substrates by the chemical vapor deposition (CVD) method using the thermal decomposition of acetone. Specifically, the authors attempt to solve the following key problems:

1. **Direct deposition of graphene on silicon substrates**:
- Most existing graphene synthesis methods rely on metal substrates (such as copper, nickel, etc.), and then the graphene needs to be transferred to other surfaces. This process is prone to introduce a large number of defects. Therefore, directly depositing graphene on substrates compatible with silicon technology is an urgent problem to be solved.

2. **Explore the influence of different intermediate layers on the quality of graphene**:
- The authors studied the influence of two different types of intermediate layers (mainly composed of sp² and sp³ hybridized carbons) on the quality of the finally deposited graphene. These intermediate layers have different surface morphologies and compositions, including diamond - like carbon (DLC), amorphous carbon (aC), SiC and a small amount of fullerenes, etc.

3. **Optimize CVD process parameters**:
- In order to obtain high - quality single - layer or multi - layer graphene, the authors studied the influence of different experimental conditions (such as temperature, gas flow, pulsed deposition, etc.) on the number of graphene layers and defect density.

4. **Understand the phase - change mechanism during the deposition process**:
- The authors hope to reveal the phases formed at different stages during the deposition process and their evolution mechanisms through various characterization methods (such as Raman spectroscopy, XPS, XRD, SEM, etc.), especially the formation of SiC, SiO₂ and fullerenes in the initial stage.

### Main research contents

- **Experimental design**: Use a horizontal tubular quartz CVD reactor to deposit graphene on (001) silicon substrates by the thermal decomposition of acetone at a high temperature (about 1150 - 1160°C).
- **Characterization methods**: Use Raman spectroscopy, scanning electron microscopy (SEM), X - ray photoelectron spectroscopy (XPS), X - ray diffraction (XRD) and grazing incidence X - ray diffraction (GIXRD) and other methods to characterize the deposited samples in detail.
- **Result analysis**: Two different types of intermediate layers were found, and the existence of single - layer to multi - layer defective graphene was confirmed. In addition, the existence of a small amount of fullerenes and nanodiamonds was also observed.

### Conclusions

- The authors successfully deposited single - layer to multi - layer defective graphene on (001) silicon substrates, but did not directly deposit graphene/graphene - related phases on the silicon substrates.
- Two different types of intermediate layers were formed during the deposition process, namely an amorphous carbon layer mainly composed of sp² hybridized carbons and a diamond - like carbon layer mainly composed of sp³ hybridized carbons.
- The co - deposition of SiC and SiO₂ species accompanied the deposition process in the initial stage, which determined the formation of the intermediate layer.
- The deposition time, temperature and gas flow under different experimental conditions have a significant impact on the quality and number of layers of the final graphene.

Through these studies, the authors provide important experimental basis and technical references for the future direct growth of high - quality graphene on silicon substrates.