Abstract:In this work, we show how domain engineered lithium niobate can be used to selectively dope monolayer MoSe2 and WSe2 and demonstrate that these ferroelectric domains can significantly enhance or inhibit photoluminescence (PL) with the most dramatic modulation occurring at the heterojunction interface between two domains. A micro-PL and Raman system is used to obtain spatially resolved images of the differently doped transition metal dichalcogenides (TMDs). The domain inverted lithium niobate causes changes in the TMDs due to electrostatic doping as a result of the remnant polarization from the substrate. Moreover, the differently doped TMDs (n-type MoSe2 and p-type WSe2) exhibit opposite PL modulation. Distinct oppositely charged domains were obtained with a 9-fold PL enhancement for the same single MoSe2 sheet when adhered to the positive (P+) and negative (P-) domains. This sharp PL modulation on the ferroelectric domain results from different free electron or hole concentrations in the materials conduction band or valence band. Moreover, excitons dissociate rapidly at the interface between the P+ and P- domains due to the built-in electric field. We are able to adjust the charge on the P+ and P- domains using temperature via the pyroelectric effect and observe rapid PL quenching over a narrow temperature range illustrating the observed PL modulation is electronic in nature. This observation creates an opportunity to harness the direct bandgap TMD 2D materials as an active optical component for the lithium niobate platform using domain engineering of the lithium niobate substrate to create optically active heterostructures that could be used for photodetectors or even electrically driven optical sources on-chip.

Nano-optical imaging of monolayer MoSe2 using tip-enhanced photoluminescence

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Nanoscale optical imaging of multi-junction MoS2-WS2 lateral heterostructure

Quantum plasmonic hot-electron injection in lateral WSe2/MoSe2 heterostructures

Tip-enhanced Raman scattering and near-field optical imaging of semiconducting monolayer and few-layer MoTe 2

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2

Tip-Enhanced Two-Photon-Excited Fluorescence of Interfacial Charge Transfer Excitons in MoS2/WS2 Heterostructures: Implications for Spectral Measurement of 2D Materials

Enhanced Photoluminescence of Monolayer MoSe2 in a Double Resonant Plasmonic Nanocavity with Fano Resonance and Mode Matching

Giant Photoluminescence Enhancement of Monolayer WSe2 Using a Plasmonic Nanocavity with On-Demand Resonance

Strong photoluminescence enhancement in indirect bandgap MoSe$_2$ nanophotonic resonator

Direct Band Gap in Multilayer Transition Metal Dichalcogenide Nanoscrolls with Enhanced Photoluminescence

Unveiling the Optical Emission Channels of Monolayer Semiconductors Coupled to Silicon Nanoantennas

Tip-enhanced photoluminescence spectroscopy of monolayer MoS 2

Correlation of Atomic Structure and Luminescence of Two-dimensional MoSe2/WSe2 In-plane Nanodot Heterostructures

Resonance Photoluminescence Enhancement of Monolayer MoS2 via a Plasmonic Nanowire Dimer Optical Antenna

Probing the Nature of Single-Photon Emitters in a WSe2 Monolayer by Magneto-Photoluminescence Spectroscopy

Transient Nanoscopy of Exciton Dynamics in 2D Transition Metal Dichalcogenides

Dynamical Control of Interlayer Excitons and Trions in WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ Heterobilayer via Tunable Near-Field Cavity

Ferroelectric driven exciton and trion modulation in monolayer MoSe2 and WSe2

Nano-optical imaging of WSe2 waveguide modes revealing light-exciton interactions