Sign reversal of magnetoresistance and p to n transition in Ni doped ZnO thin film

Arpana Agrawal,Tanveer A. Darb,R.J. Choudhary,Archana Lakhani,Pranay K. Sen,Pratima Sen

DOI: https://doi.org/10.48550/arXiv.1703.03942

2017-03-11

Abstract:We report the magnetoresistance and nonlinear Hall effect studies over a wide temperature range in pulsed laser deposited Ni0.07Zn0.93O thin film. Negative and positive contributions to magnetoresistance at high and low temperatures have been successfully modeled by the localized magnetic moment and two band conduction process involving heavy and light hole subbands, respectively. Nonlinearity in the Hall resistance also agrees well with the two channel conduction model. A negative Hall voltage has been found for T $\gte 50 K$, implying a dominant conduction mainly by electrons whereas positive Hall voltage for T less than 50 K shows hole dominated conduction in this material. Crossover in the sign of magnetoresistance from negative to positive reveals the spin polarization of the charge carriers and hence the applicability of Ni doped ZnO thin film for spintronic applications.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the magnetoresistance (MR) and Hall effect behaviors of nickel - doped zinc oxide (Ni0.07Zn0.93O) thin films at different temperatures. Specifically, the main research problems include:

1. **Sign Reversal of Magnetoresistance**: Why does the magnetoresistance change from negative to positive at low temperatures (<50K)? What are the physical mechanisms behind this change?

2. **Non - linearity of the Hall Effect**: Is the non - linear phenomenon of Hall resistance observed at low temperatures related to magnetic ordering? How can this non - linearity be explained?

3. **Carrier - type Conversion**: Why is the Hall voltage negative at high temperatures (≥50K), indicating that electrons dominate conduction; while at low temperatures (<50K), the Hall voltage is positive, indicating that holes dominate conduction? What are the mechanisms of this conversion?

### Research Background

Nickel - doped zinc oxide (Ni - ZnO) is a dilute magnetic semiconductor (DMS) and an important candidate material for spintronics applications due to its room - temperature ferromagnetism and small spin - orbit coupling. Magnetoresistance (MR) measurement is an effective tool for studying spin - polarized transport in these materials and can reveal the spin - polarization of carriers.

### Main Findings

1. **Magnetoresistance Behavior**:
- At low temperatures (<50K), the magnetoresistance changes from negative to positive and first decreases and then increases with the increase of magnetic field.
- At high temperatures (≥50K), the magnetoresistance is always negative, and its magnitude increases with the increase of magnetic field.

2. **Hall Effect**:
- At low temperatures (<50K), the Hall voltage is positive, indicating that holes are the dominant carriers; at high temperatures (≥50K), the Hall voltage is negative, indicating that electrons are the dominant carriers.
- The observed non - linearity of Hall resistance conforms to the two - channel conduction model, indicating the multi - channel conduction mechanism of heavy - hole and light - hole sub - bands.

### Explanation and Model

1. **Sign Reversal of Magnetoresistance**:
- The positive magnetoresistance at low temperatures can be explained by the spin - split energy band (caused by the Zeeman effect) and the multi - channel conduction mechanism. When the magnetic field is strong enough, the spin - split energy band of holes leads to spin - polarized current, thus producing positive magnetoresistance.
- The negative magnetoresistance at high temperatures is mainly due to the enhanced scattering caused by local magnetic moments.

2. **Non - linearity of the Hall Effect**:
- The non - linearity of Hall resistance at low temperatures can be explained by the two - band model (involving heavy - hole and light - hole sub - bands), which is consistent with the multi - channel conduction mechanism of spin - polarized carriers.

3. **Carrier - type Conversion**:
- When the temperature is below 50K, due to the large effective mass of holes and strong spin - orbit coupling, holes become the dominant carriers, resulting in a positive Hall voltage.
- When the temperature is above 50K, electrons become the dominant carriers, resulting in a negative Hall voltage.

### Conclusion

This study shows that nickel - doped zinc oxide thin films exhibit different magnetoresistance and Hall effect characteristics at different temperatures, and these characteristics can be explained by the two - band model and the multi - channel conduction mechanism of spin - polarized carriers. These findings provide an important basis for further exploring the applications of Ni - ZnO thin films in spintronics.