Delta-doped Beta- Gallium Oxide Field Effect Transistor

Sriram Krishnamoorthy,Zhanbo Xia,Sanyam Bajaj,Mark Brenner,Siddharth Rajan
DOI: https://doi.org/10.7567/APEX.10.051102
2017-02-18
Abstract:We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was used to realize thin (12 nm) low-resistance layers with sheet resistance of 320 Ohm/square (mobility of 83 cm^2/Vs, integrated sheet charge of 2.4x10^14 cm^-2). A single delta-doped sheet of carriers was employed as a channel to realize a field effect transistor with current ID,MAX =292 mA/mm and transconductance gM = 27 mS/mm.
Mesoscale and Nanoscale Physics,Instrumentation and Detectors
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is: how to achieve a thin layer with high carrier concentration and high mobility in gallium oxide (β - Ga₂O₃) through silicon delta - doping technology, thereby optimizing the performance of field - effect transistors (FETs). Specifically, the authors aim to overcome the limitations in traditional doping methods, such as source oxidation problems and lattice damage at high doping concentrations, in order to achieve efficient, high - performance β - Ga₂O₃ - based devices. ### Specific Background of the Problem 1. **Material Properties** - β - Ga₂O₃ is an emerging ultra - wide - bandgap semiconductor, with a breakdown electric field as high as 8 MV/cm and a low impact ionization coefficient, which is suitable for high - voltage power switching applications. - Compared with existing GaN - based HEMTs, β - Ga₂O₃ is expected to provide a higher breakdown voltage and a higher channel charge density. 2. **Existing Challenges** - Traditional doping methods (such as Si ion implantation or MBE/MOCVD growth) usually result in thick and low - doped channel layers, which limit device performance. - Source oxidation problems and lattice damage at high doping concentrations are the main technical bottlenecks. ### Solutions 1. **Delta Doping Technology** - Use plasma - assisted molecular beam epitaxy (PA - MBE) combined with shutter - pulse technology to achieve a high Si doping concentration in an oxidizing environment. - Avoid Si source oxidation through the shutter - pulse scheme and obtain a flat and abrupt Si doping profile. 2. **Experimental Results** - A low - resistance layer with a thickness of 12 nm was successfully prepared, with a sheet resistance of 320 Ω/sq, a mobility of 83 cm²/Vs, and an integrated sheet charge of 2.4 × 10¹⁴ cm⁻². - A field - effect transistor was realized based on a single delta - doped layer, with a maximum current \(I_{D,\text{MAX}} = 292 \, \text{mA/mm}\) and a transconductance \(g_M = 27 \, \text{mS/mm}\). ### Summary This research shows the application potential of delta - doping technology in β - Ga₂O₃, especially in achieving high carrier concentration and high mobility. This provides a new approach for developing high - performance β - Ga₂O₃ - based high - frequency and high - power devices. Formula Summary: - Sheet resistance \(R_s = 320 \, \Omega/\square\) - Mobility \(\mu = 83 \, \text{cm}^2/\text{Vs}\) - Integrated sheet charge \(Q_s = 2.4 \times 10^{14} \, \text{cm}^{-2}\) - Maximum current \(I_{D,\text{MAX}} = 292 \, \text{mA/mm}\) - Transconductance \(g_M = 27 \, \text{mS/mm}\)