Abstract:Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect transistors (FETs) using SGSs and/or spin-gapped metals (SGMs) as source and drain electrodes. These devices operate similarly to metal-semiconductor Schottky barrier FETs, where a potential barrier forms between the SGS (or SGM) electrode and the semiconducting channel. Unlike traditional Schottky barrier FETs, these devices utilize the unique spin-dependent transport properties of SGS/SGM electrodes to achieve sub-60 mV/dec switching, overcoming the 60 mV/dec sub-threshold swing limit in MOSFETs for low-voltage operation. Additionally, SGMs contribute a negative differential resistance (NDR) effect with an ultra-high peak-to-valley current ratio. The proposed spintronic FETs combine sub-60 mV/dec switching, non-local giant magnetoresistance (GMR), and NDR, making them suitable for applications like logic-in-memory computing and multivalued logic. These properties support computing architectures beyond the von-Neumann model, enabling efficient data processing. Two-dimensional (2D) nanomaterials provide a promising platform for these multifunctional FETs. We screen a computational 2D materials database to identify suitable SGS and SGM materials, selecting VS$2$ as the SGS for simulations. Using a non-equilibrium Green's function method with density functional theory, we simulate transfer ($I{\mathrm{D}}$-$V_{\mathrm{G}}$) and output ($I_{\mathrm{D}}$-$V_{\mathrm{D}}$) characteristics of a VS$_2$/Ga$_2$O$_2$ FET based on 2D type-II SGS VS$_2$, predicting a sub-threshold swing of 20 mV/dec, a high on/off ratio of 10$^8$, and a notable non-local GMR effect, demonstrating potential for low-power, high-performance applications.

Proposal for a spin MOSFET based on spin gapless semiconductors

Multifunctional spintronic transistors: Sub-60 mV/dec switching, non-local GMR, and NDR in spin gapless semiconductor and/or spin gapped metal FETs

Proposal for Multi-Gate Spin Field-Effect Transistor

Designing Organic Spin-Gapless Semiconductors via Molecular Adsorption on C4N3 Monolayer

Spin Injection Based on the Spin Gapless Semiconductor(sgs)/semiconductor Heterostructures

Spintronics in Semiconductor Nanostructures

Perspective on the spin field-effect transistor

Spin Transport Properties Based On Spin Gapless Semiconductor Cofemnsi

Spin Gapless van der Waals Heterostructure for Spin Gating Through Magnetic Injection Device

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure

Designing High-Performance Nanoscale Spin-MOSFET Devices by Using Two-Dimensional Half-Metallic Cr2Se3

Fabrication and characterization of pseudo-spin-MOSFET

Spin-gapless Semiconductors for Future Spintronics and Electronics

Spin-gapped metals: A novel class of materials -- the case of semi-Heusler compounds

Multiple Dimensions of Spin-Gapless Semiconducting States in Tetragonal Sr2CuF6

Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor

Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor

Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact

Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure

Spin-dependent transport and current modulation in a current-in-plane field-effect transistor

Persistent Spin Helix-Based Spin Field Effect Transistor