Spin Polarized Transport in Core Shell Nanowire of Silicon and Germanium

Bhupesh Bishnoi,Bahniman Ghosh

DOI: https://doi.org/10.48550/arXiv.1604.03283

2016-04-12

Abstract:We investigate spin polarized electron transport in ultra-thin Si-Core/Ge-Shell and Ge-Core/Si-Shell nanowire system using semi-classical Monte Carlo simulation method. Depolarization of electron's spin occurs in nanowire mainly due to D'yakonov-Perel dephasing (DP-mechanism) and Elliott-Yafet dephasing (EY-mechanism). We studied the dependence of spin dephasing on ultra-thin silicon core diameter in Si-Core/Ge-Shell nanowire and germanium core diameter in Ge-Core/Si-Shell nanowire. Variation in spin dephasing length with varying core diameter ranging from 1 nm to 9 nm indicate that spin dephasing length increases with increase in Si-core diameter in Si-Core/Ge-Shell nanowire and spin dephasing length decreases with increase in Ge-core diameter in Ge-Core/Si-Shell nanowire. We then studied the variation in spin dephasing length with varying externally applied transverse electric field ranging from 20 kV/cm to100 kV/cm. In the electric field dependence study we found that spin dephasing length is weakly dependent upon applied electric field. In the end, we studied the variation in spin dephasing length with varying temperature in the range of 4 K to 377 K. In this simulational study we found that for both Si-Core/Ge-Shell and Ge-Core/Si-Shell nanowire system spin dephasing length shows a strong dependence on temperature and spin dephasing length increases with decrease in temperature from room temperature range.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the characteristics of spin - polarized electron transport in ultrathin Si - Core/Ge - Shell and Ge - Core/Si - Shell nanowire systems. Specifically, the author explores the following aspects through the semiclassical Monte Carlo simulation method:

1. **Relationship between spin - dephasing length and core diameter**:
- In the Si - Core/Ge - Shell nanowire, as the diameter of the Si core increases, the spin - dephasing length increases.
- In the Ge - Core/Si - Shell nanowire, as the diameter of the Ge core increases, the spin - dephasing length decreases.

2. **Relationship between spin - dephasing length and applied transverse electric field**:
- The influence of the applied transverse electric field varying in the range from 20 kV/cm to 100 kV/cm on the spin - dephasing length was studied, and it was found that the dependence of the spin - dephasing length on the applied electric field is weak and non - monotonic.

3. **Relationship between spin - dephasing length and temperature**:
- The influence of the temperature varying in the range from 4 K to 377 K on the spin - dephasing length was studied, and it was found that the spin - dephasing length decreases significantly with the increase of temperature, showing a strong temperature dependence.

### Formula summary

1. **Rashba spin - orbit coupling coefficient**:
\[
\alpha_R=\frac{\hbar^2 E_T}{m^*}
\]
where \(E_T\) is the transverse electric field and \(m^*\) is the effective mass.

2. **Spin - flip scattering rate (Elliott - Yafet mechanism)**:
\[
\tau_{sf}^{-1}=\frac{2\pi}{\hbar}\left(\frac{\Delta}{E_g}\right)^2\frac{k_BT}{\tau_p}
\]
where \(\Delta\) is the spin - orbit splitting energy, \(E_g\) is the band gap, \(k_B\) is the Boltzmann constant, \(T\) is the temperature, and \(\tau_p\) is the momentum relaxation time.

3. **Phonon scattering rate**:
\[
\Gamma=\frac{D^2}{\hbar v_s}\sqrt{\frac{m^*}{2\pi k_BT}}
\]
where \(D\) is the phonon deformation potential, \(v_s\) is the sound speed, and \(m^*\) is the effective mass.

Through these studies, the author hopes to provide theoretical basis and technical support for the future design of spintronic devices based on Si and Ge materials.