Abstract:Electrolyte gating using ionic liquid electrolytes has recently generated considerable interest as a method to achieve large carrier density modulations in a variety of materials. In noble metal thin films, electrolyte gating results in large changes in sheet resistance. The widely accepted mechanism for these changes is the formation of an electric double layer with a charged layer of ions in the liquid and accumulation or depletion of carriers in the thin film. We report here a different mechanism. In particular, we show using x-ray absorption near edge structure (XANES) that the previously reported large conductance modulation in gold films is due to reversible oxidation and reduction of the surface rather than the charging of an electric double layer. We show that the double layer capacitance accounts for less than 10\% of the observed change in transport properties. These results represent a significant step towards understanding the mechanisms involved in electrolyte gating.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: What is the mechanism behind the large - scale modulation of electrical conductivity observed in electrolyte - gated thin gold films? Specifically, researchers previously generally believed that this change in electrical conductivity was caused by the charging of the electric double layer. However, through experiments, the authors found that this phenomenon is mainly due to the reversible oxidation and reduction processes on the gold surface, rather than the charging of the electric double layer. They pointed out that the electric double - layer capacitance can only account for less than 10% of the change in transport properties, so they proposed a new mechanism to explain this phenomenon. ### Main problems and background 1. **Electrolyte - gating technology**: In recent years, electrolyte gating using ionic liquid electrolytes has attracted wide attention because it can achieve large carrier - density modulation in various materials. 2. **Known mechanism**: It is generally believed that, in this case, when a voltage is applied, a charged - ion layer will be formed on the channel surface, thereby changing the carrier density in the channel and forming an electric double layer. 3. **Anomalous phenomenon**: However, the change in carrier density observed in experiments far exceeds the range that can be explained by the electric double - layer capacitance, indicating that there may be other mechanisms. ### Main contributions of the paper - **XANES experiment**: Through X - ray absorption near - edge structure (XANES) experiments, the authors demonstrated that the surface of the gold thin film will undergo a reversible oxidation reaction under a negative gate voltage, forming Au₂O₃. - **Electrochemical impedance spectroscopy (EIS)**: Through electrochemical impedance spectroscopy measurements, the authors found that the electric double - layer capacitance can only explain a small part of the change in carrier density. - **Conclusion**: The authors concluded that surface oxidation and reduction are the main mechanisms leading to the large - scale change in electrical conductivity in electrolyte - gated gold thin films, while the influence of electric double - layer charging is relatively small. ### Formula summary - Calculation formula for the electric double - layer capacitance \(C_{DL}\): \[ Q = C_{DL}\cdot V \] where \(Q\) is the accumulated charge density and \(V\) is the applied voltage. - Estimation of carrier - density change: \[ \Delta n=\frac{\Delta Q}{e} \] where \(\Delta Q\) is the change in charge density and \(e\) is the electron charge. ### Conclusion The paper experimentally proves that the large - scale change in the electrical conductivity of gold thin films under electrolyte gating is mainly due to surface oxidation and reduction reactions, rather than electric double - layer charging. This finding is of great significance for understanding the electrolyte - gating mechanism and may influence the research directions in related fields in the future.

Mechanism for the Large Conductance Modulation in Electrolyte-gated Thin Gold Films

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