Abstract:Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have shown low linear loss, negligible nonlinear loss, and high power handling over traditional silicon photonics. To achieve high-density photonic integration and high effective nonlinearity through tight optical confinement, thick stoichiometric Si$_3$N$_4$ films are indispensable. However, when using low-pressure chemical vapor deposition (LPCVD) to achieve high optical material transparency, Si$_3$N$_4$ films exhibit large tensile stress on the order of GPa. Methods for crack prevention are therefore essential. The photonic Damascene process has addressed this issue, attaining record low loss Si$_3$N$_4$ PICs, but it lacks control of the waveguide height. Conversely, precise waveguide dimension and ultra-low loss have been achieved with subtractive processing, but this method is not compatible with mass production due to the use of electron beam lithography. To date, an outstanding challenge is to attain both lithographic precision and ultra-low loss in high confinement Si$_3$N$_4$ PICs that are compatible with large-scale foundry manufacturing. Here, we present a single-step deposited, DUV-based subtractive method for producing wafer-scale ultra-low loss Si$_3$N$_4$ PICs that harmonize these necessities. By employing deep etching of densely distributed, interconnected trenches into the substrate, we effectively mitigate the tensile stress in the Si$_3$N$_4$ layer, enabling direct deposition of thick films without cracking and substantially prolonged storage duration. Lastly, we identify ultraviolet (UV) radiation-induced damage that can be remedied through rapid thermal annealing. Collectively, we develop ultra-low loss Si$_3$N$_4$ microresonators and 0.5 m-long spiral waveguides with losses down to 1.4 dB/m at 1550 nm with high production yield.

Single-Mode Optical Waveguides on Native High-Refractive-Index Substrates

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

A Universal Approach to High-Index-Contrast Flexible Integrated Photonics

Weak optical modes for high-density and low-loss photonic circuit

Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

On-chip Wavefront Shaping in Spacing-Varied Waveguide Arrays

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Broadband single-mode planar waveguides in monolithic 4H-SiC

Study of Group III-V Waveguides on Sapphire Platform for Photonic Integrated Circuits

Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

Foundry compatible, efficient wafer-scale manufacturing of ultra-low loss, high-density Si$_3$N$_4$ photonic integrated circuits

Single-mode, single-polarization and dispersion-flattened waveguides based on silicon carbide and diamond

Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching

Compact Silicon-Based Wavelength-Selective Photonic Integrated Devices and the Applications

A low-loss SiN photonic integrated circuit foundry platform for waveguide-enhanced Raman spectroscopy

Sandwiched Hybrid Waveguide Platform for Integrated Photonics Application