Light emission, structure-phase evolution, and photocatalytic behavior in full-series multilayered GaTe 1−x S x (0 ≤ x ≤ 1) with direct-transition edge

Luthviyah Choirotul Muhimmah,Yu-Hung Peng,Ching-Hwa Ho
DOI: https://doi.org/10.1016/j.mtadv.2023.100450
IF: 9.918
2023-11-27
Materials Today Advances
Abstract:The crystal structures and optical properties of full-series multilayered GaTe 1−x S x (0 ≤ x ≤ 1) are examined. The results reveal that the monoclinic (M) phase dominates for 0 ≤ x ≤ 0.4, and the hexagonal (H) phase dominates for 0.425 ≤ x ≤ 1. The full-series multilayer GaTe 1−x S x exhibited strong photoluminescence. The emission range of M-GaTe 1−x S x (0 ≤ x ≤ 0.4) layers displays 1.65–1.77 eV (700–750 nm) and that of the H-GaTe 1−x S x (0 ≤ x ≤ 1) layers is 1.588–2.5 eV (496–780 nm). Micro-time-resolved photoluminescence (μTRPL) revealed that the M-phase had a shorter PL recombination lifetime than H-phase because the surface effect. The multilayer GaTe 1−x S x (0 ≤ x ≤ 1) exhibited superior light emission and absorption capabilities for application in light-emitting and photocatalytic devices. The GaTe 0.5 S 0.5 nanosheet photocatalyst demonstrated the best photocatalytic performance because its abundant surface state and mixed phases to enhance the photo-degradation ability.
materials science, multidisciplinary
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