Abstract:This paper reports an alloying strategy to prepare single crystals of InSe1−xSx and InSe1−yTey with continuously tunable bandgaps. The ternary alloys are fabricated into field‐effect transistors, exhibiting competitive electronic and optoelectronic performance. This work provides additional degree of freedom for tuning the optical and electrical properties of InSe, and illustrates their potential applications in high‐performance electronic and optoelectronic devices.Alloying offers an efficient strategy to tune the bandgap of two‐dimensional (2D) layered materials, enabling them to tailor the optical and electronic attributes without compromising the structural integrity. Here the authors report the synthesis of a series of ternary InSe1−xSx and InSe1−yTey alloys possessing ε‐polymorph and single crystalline structure. Both the photoluminescence and Raman spectra of multilayer InSe1−xSx and InSe1−yTey demonstrate that an effective modulation of bandgap and concomitant optical properties is achieved by tuning the alloy compositions, consistent with density functional theory calculations. Field‐effect transistors fabricated from the multilayer alloys on SiO2 dielectric substrates display electron field‐effect mobilities of up to ≈127 cm2 V−1 s−1. All the multilayer alloy devices show a high current on/off ratio of ≈108. When fabricated into photodetectors, multilayer InSe0.9S0.1 and InSe0.9Te0.1 exhibit maximum photoresponsivities of 5.4 × 105 and 7.7 × 104 A W−1, respectively. Moreover, the InSe1−yTey alloys are able to expand the photoresponse range into 1250 nm due to the bandgap narrowing upon Te alloying. This work sheds light on rationally designing 2D layered InSe with tunable bandgaps via alloying, and demonstrates their promising applications in electronics and optoelectronics.

Monotonous Alloying-Driven Band Edge Emission in Two-Dimensional Hexagonal GaSe1−xTex Semiconductors for Visible to Near-Infrared Photodetection

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Controllable Growth of Vertical Heterostructure GaTe(x)Se(1-x)/Si by Molecular Beam Epitaxy.

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

Tunable Electronic Properties of Two-Dimensional GaSe1−xTex Alloys

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga2O3 Hybrid-Dimensional Heterostructures.

Growth Mode Transition in Two-Dimensional GaSe on Three-Dimensional GaN/Sapphire Platform: Implication for Self-Powered Photodetection

Atomic Layered 2d/3d Heterostructure For Sensitive Photodetection

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Tunable Electronic Structure in Gallium Chalcogenide van der Waals Compounds

Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement.

Van der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells, and Superlattices

Photodetection and Infrared Imaging Based on Cd3As2 Epitaxial Vertical Heterostructures

Tailoring Semiconductor Lateral Multi-junctions for Giant Photoconductivity Enhancement

Bandgap Engineering of Ternary ε‐InSe 1− x S x and ε‐InSe 1− y Te y Single Crystals for High‐Performance Electronics and Optoelectronics

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga 2 O 3 Hybrid-Dimensional Heterostructures