Quantum spin Hall insulators and topological Rashba-splitting edge states in two-dimensional CX 3 (X = Sb, Bi)

Shan-Shan Wang,Wencong Sun,Shuai Dong

DOI: https://doi.org/10.1039/d0cp05374k

IF: 3.3

2021-01-01

Physical Chemistry Chemical Physics

Abstract:Large-gap QSH insulators with topological Rashba-splitting edge states.

chemistry, physical,physics, atomic, molecular & chemical

What problem does this paper attempt to address?

Quantum Spin Hall Insulators And Topological Rashba-Splitting Edge States In Two-Dimensional Cx3 (X = Sb, Bi)

Shan-Shan Wang,Wencong Sun,Shuai Dong

DOI: https://doi.org/10.1039/d0cp05374k

IF: 3.3

2021-01-01

Physical Chemistry Chemical Physics

Abstract:Two-dimensional topological materials attracted intense interest in condensed matter physics due to their topologically protected edge states and potential applications in electronic devices. Here, based on first-principles calculations, we found that a two-dimensional CX3 (X = Sb, Bi) monolayer is a quantum spin Hall insulator with a large band gap. With the strong spin-orbit coupling effect, CX3 exhibits noticeable bulk band gaps up to 470 meV, sufficiently large for realizing the quantum spin Hall effect at room temperature. The topological characteristic is confirmed by the Z(2) invariant since the system preserves time-reversal symmetry. Particularly, the CSb3 monolayer displays unique topologically entangled Rashba-splitting edge states, resembling nearly free-electron quadratic dispersion. Such topologically entangled Rashba-like edge states derive from the spin-orbit coupling effect and inversion symmetry breaking on the edges. Moreover, we demonstrate that the topological properties are perfectly preserved in the CX3 monolayer even with a h-BN substrate. The nontrivial quantum spin Hall state in the CX3 monolayer will provide possibilities for studying a novel phenomenon of edge states and potential applications in low-dissipation electronic devices.
Topological Rashba-like Edge States in Large-Gap Quantum Spin Hall Insulators

Yuanjun Jin,Li-Yong Gan,Rui Wang,Jinzhu Zhao,Yueyue Shan,Junfeng Liu,Hu Xu

DOI: https://doi.org/10.1103/physrevmaterials.2.114207

IF: 3.98

2018-01-01

Physical Review Materials

Abstract:The search for large-band-gap quantum spin Hall (QSH) insulators, in which the dissipationless gapless edge states lie inside the bulk gap, is critical for their practical applications at room temperature. Based on first-principles calculations, we propose a sort of QSH insulator in a rectangular structure, i.e., AuSb, AuAs, and CuAs monolayers, which exhibits sizable bulk gaps up to 258 meV. These compounds host unexpected topological Rashba-like edge states, which exhibit strong dispersion with a nearly-free-electron feature. Such nontrivial edge states originate from spin-orbital coupling and an abrupt discontinuous potential across the surface. Furthermore, we argue that the AuSb monolayer can be epitaxially grown on a rutile TiO2(110) surface. Importantly, the thermodynamic stability of AuSb is enhanced while the topological features are perfectly preserved due to the weak van der Waals interaction at the interface. Our findings provide promising large-gap QSH candidates with exotic topological Rashba-like edge states that are in favor of experimental realization at room temperature.
The quantum spin Hall effect and topological insulators

Xiao-Liang Qi,Shou-Cheng Zhang

DOI: https://doi.org/10.1063/1.3293411

2010-01-11

Abstract:In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.

Materials Science,Mesoscale and Nanoscale Physics
Quantum spin Hall effect in antiferromagnetic topological heterobilayers

Xiangting Hu,Ning Mao,Hao Wang,Ying Dai,Baibiao Huang,Chengwang Niu

DOI: https://doi.org/10.1103/physrevb.103.085109

IF: 3.7

2021-02-08

Physical Review B

Abstract:The quantum spin Hall (QSH) insulator, ensured by the time-reversal (T) symmetry, has been a conceptual milestone of complex topological phases and well known to realize the quantum anomalous Hall effect when T symmetry is broken by introducing ferromagnetism. Here, based on first-principles calculations and a tight-binding model, we show that, unlike previous T-symmetry breaking, the QSH phase can survive under the antiferromagnetic long-range order in a RbCuSe/CsMnP heterobilayer consisting of a nonmagnetic QSH insulator RbCuSe and an antiferromagnetic insulator CsMnP. The calculated spin Chern number, Z2 invariant, and gapless edge state confirm the topological nontrivial phase clearly. Moreover, the role of effective and Rashba spin-orbit coupling and the magnitude of antiferromagnetism are discussed to reveal the underlying physical mechanism. Our results may lead to further scientific and technological advances in topological magnetism and antiferromagnetic spintronics.

physics, condensed matter, applied,materials science, multidisciplinary
Robust Tunable Large-Gap Quantum Spin Hall States in Monolayer Cu2S on Insulating Substrates

Ali Sufyan,Gennevieve Macam,Zhi-Quan Huang,Chia-Hsiu Hsu,Feng-Chuan Chuang

DOI: https://doi.org/10.1021/acsomega.2c00781

IF: 4.1

2022-04-27

ACS Omega

Abstract:Quantum spin Hall (QSH) insulators with large band gaps and dissipationless edge states are of both technological and scientific interest. Although numerous two-dimensional (2D) systems have been predicted to host the QSH phase, very few of them harbor large band gaps and retain their nontrivial band topology when they are deposited on substrates. Here, based on a first-principles analysis with hybrid functional calculations, we investigated the electronic and topological properties of inversion-asymmetric monolayer copper sulfide (Cu2S). Interestingly, we found that monolayer Cu2S possesses an intrinsic QSH phase, Rashba spin splitting, and a large band gap of 220 meV that is suitable for room-temperature applications. Most importantly, we constructed heterostructures of a Cu2S film on PtTe2, h-BN, and Cu(111) substrates and found that the topological properties remain preserved upon an interface with these substrates. Our findings suggest Cu2S as a possible platform to realize inversion-asymmetric QSH insulators with potential applications in low-dissipation electronic devices.
Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

Xiaofeng Qian,Junwei Liu,Liang Fu,Ju Li

DOI: https://doi.org/10.1126/science.1256815

IF: 56.9

2014-12-12

Science

Abstract:Quantum spin Hall (QSH) effect materials feature edge states that are topologically protected from backscattering. However, the small band gap in materials that have been identified as QSH insulators limits applications. We use first-principles calculations to predict a class of large-gap QSH insulators in two-dimensional transition metal dichalcogenides with 1T′ structure, namely, 1T′-MX 2 with M = (tungsten or molybdenum) and X = (tellurium, selenium, or sulfur). A structural distortion causes an intrinsic band inversion between chalcogenide- p and metal- d bands. Additionally, spin-orbit coupling opens a gap that is tunable by vertical electric field and strain. We propose a topological field effect transistor made of van der Waals heterostructures of 1T′-MX 2 and two-dimensional dielectric layers that can be rapidly switched off by electric field through a topological phase transition instead of carrier depletion.

multidisciplinary sciences
Quantum Spin-Quantum Anomalous Hall Insulators And Topological Transitions In Functionalized Sb(111) Monolayers

Tong Zhou,Jiayong Zhang,Bao Zhao,Huisheng Zhang,Zhongqin Yang

DOI: https://doi.org/10.1021/acs.nanolett.5b01373

IF: 10.8

2015-01-01

Nano Letters

Abstract:Electronic and topological behaviors of Sb(111) monolayers decorated with H and certain magnetic atoms are investigated by using ab initio methods. The drastic exchange field induced by the magnetic atoms, together with strong spin-orbit coupling (SOC) of Sb atoms, generates one new category of valley polarized topological insulators, called quantum spin-quantum anomalous Hall (QSQAH) insulators in the monolayer, with a band gap up to 53 meV. The strong SOC is closely related to Sb p(x) and p(y) orbitals, instead of p(z) orbitals in usual two-dimensional (2D) materials. Topological transitions from quantum anomalous Hall states to Q5QAH states and then to time-reversal-symmetry-broken quantum spin Hall states are achieved by tuning the SOC strength. The behind mechanism is revealed. Our work is helpful for future valleytronic and spintronic applications in 2D materials.
Direct Observation of the Topological Surface State in the Topological Superconductor 2M-WS2

Soohyun Cho,Soonsang Huh,Yuqiang Fang,Chenqiang Hua,Hua Bai,Zhicheng Jiang,Zhengtai Liu,Jishan Liu,Zhenhua Chen,Yuto Fukushima,Ayumi Harasawa,Kaishu Kawaguchi,Shik Shin,Takeshi Kondo,Yunhao Lu,Gang Mu,Fuqiang Huang,Dawei Shen

DOI: https://doi.org/10.1021/acs.nanolett.2c02372

IF: 10.8

2022-01-01

Nano Letters

Abstract:The quantum spin Hall (QSH) effect has attracted extensive research interest because of the potential applications in spintronics and quantum computing, which is attributable to two conducting edge channels with opposite spin polarization and the quantized electronic conductance of 2e(2)/h. Recently, 2M-WS2, a new stable phase of transition metal dichalcogenides with a 2M structure showing a layer configuration identical to that of the monolayer 1T ' TMDs, was suggested to be a QSH insulator as well as a superconductor with a critical transition temperature of around 8 K. Here, high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES are applied to investigate the electronic and spin structure of the topological surface states (TSS) in the superconducting 2M-WS2. The TSS exhibit characteristic spin-momentum-locking behavior, suggesting the existence of long-sought nontrivial Z(2) topological states therein. We expect that 2M-WS2 with coexisting superconductivity and TSS might host the promising Majorana bound states.
Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures

Tong Zhou,Jiayong Zhang,Yang Xue,Bao Zhao,Huisheng Zhang,Hua Jiang,Zhongqin Yang

DOI: https://doi.org/10.1103/physrevb.94.235449

2017-01-01

Abstract:A novel topological insulator with tunable edge states, called a quantum spin\char21{}quantum anomalous Hall (QSQAH) insulator, is predicted in a heterostructure of a hydrogenated $\mathrm{Sb}(\mathrm{S}{\mathrm{b}}_{2}\mathrm{H})$ monolayer on a $\mathrm{LaFe}{\mathrm{O}}_{3}$ substrate by using ab initio methods. The substrate induces a drastic staggered exchange field in the $\mathrm{S}{\mathrm{b}}_{2}\mathrm{H}$ film, which plays an important role to generate the QSQAH effect. A topologically nontrivial band gap (up to 35 meV) is opened by Rashba spin-orbit coupling, which can be enlarged by strain and an electric field. To understand the underlying physical mechanism of the QSQAH effect, a tight-binding model based on ${p}_{x}$ and ${p}_{y}$ orbitals is constructed. With the model, the exotic behaviors of the edge states in the heterostructure are investigated. Dissipationless chiral charge edge states related to one valley are found to emerge along both sides of the sample, whereas low-dissipation spin edge states related to the other valley flow only along one side of the sample. These edge states can be tuned flexibly by polarization-sensitive photoluminescence controls and/or chemical edge modifications. Such flexible manipulations of the charge, spin, and valley degrees of freedom provide a promising route towards applications in electronics, spintronics, and valleytronics.
Topological phase transition on the ruby lattice with Rashba spin–orbit coupling and an exchange field

Yuan Yang,Wenting Zhou,Changrong Shu,Xiaobing Li

DOI: https://doi.org/10.1016/j.physb.2023.415118

2023-07-14

Abstract:We investigate the topological phases in a ruby lattice when considering the effects of the intrinsic spin–orbit coupling, the Rashba spin–orbit coupling and an exchange field. The combination of the Rashba coupling and the exchange field leads to the quantum anomalous Hall effect characterized by a nonzero Chern number. We show that the variation of the exchange field drives interesting topological phase transition between different topological insulating phases, including the quantum spin Hall insulator with Cs=±1 , the quantum anomalous Hall insulator with C=±1 and C=±2 . Particularly, the quantum anomalous Hall phases with high Chern numbers C=−4 and C=6 can be realized by tuning the strength of the exchange field. Each phase transition is accompanied by closing of the bulk gap. Furthermore, we find a new topological phase which exhibits the electronic characteristics of both the quantum spin Hall effect and the quantum anomalous Hall effect. The band structures of the edge states confirm the classification of various topological gapped phases.

physics, condensed matter
Quantum oscillations in Rashba semiconductor BiTeCl

z j xiang,dan zhao,f chen,x h chen,c shang,x g luo,teresa wu,shan ying li,b y pan

DOI: https://doi.org/10.1103/PhysRevB.90.201202

IF: 3.7

2014-01-01

Physical Review B

Abstract:Recently, a Dirac surface state (SS) was observed in Rashba semiconductor BiTeCl by angle-resolved photoemission spectroscopy (ARPES), which suggested strong inversion symmetry breaking therein, despite the absence of such symmetry breaking in existing first-principles calculations. To clarify the aforementioned conflict as well as understand the nature of such emergent phenomenon, we employ both high-field Shubnikov-de Haas (SdH) oscillation and Hall measurements to study BiTeCl single crystals. Both techniques yield consistent observation of a three-dimensional Fermi surface from a bulk state, while Dirac surface state contribution appears absent. Finally, we propose that various gating techniques could be used to explore the novel topological nature of this material.
Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Yandong Ma,Liangzhi Kou,Ying Dai,Thomas Heine

DOI: https://doi.org/10.1103/PhysRevB.92.085427

2015-04-01

Abstract:Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of first-principles calculations, we predict a family of robust 2D TIs in monolayer square transition metal dichalcogenides (MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2). Sizeable intrinsic nontrivial bulk band gaps ranging from 24 to 187 meV are obtained, guarantying the quantum spin Hall (QSH) effect observable at room temperature in these new 2D TIs. Significantly different from most known 2D TIs with comparable band gaps, these sizeable energy gaps originate from the strong spin-orbit interaction related to the pure d electrons of the Mo/W atoms around the Fermi level. A single pair of topologically protected helical edge states is established for the edge of these systems with the Dirac point locating in the middle of the bulk band gap, and their topologically nontrivial states are also confirmed with nontrivial topological invariant Z2 = 1. More interestingly, by controlling the applied strain, a topological quantum phase transition between a QSH phase and a metallic phase or a trivial insulating phase can be realized in these 2D materials, and the detailed topological phase diagram is established.

Materials Science
Effective Spin Dephasing Mechanism in Confined Two-Dimensional Topological Insulators

JunJie Qi,HaiWen Liu,Hua Jiang,XinCheng Xie

DOI: https://doi.org/10.1007/s11433-016-0100-1

2016-01-01

Science China Physics Mechanics and Astronomy

Abstract:A Kramers pair of helical edge states in quantum spin Hall effect (QSHE) is robust against normal dephasing but not robust to spin dephasing. In our work, we provide an effective spin dephasing mechanism in the puddles of two-dimensional (2D) QSHE, which is simulated as quantum dots modeled by 2D massive Dirac Hamiltonian. We demonstrate that the spin dephasing effect can originate from the combination of the Rashba spin-orbit coupling and electron-phonon interaction, which gives rise to inelastic backscattering in edge states within the topological insulator quantum dots, although the time-reversal symmetry is preserved throughout. Finally, we discuss the tunneling between extended helical edge states and local edge states in the QSH quantum dots, which leads to backscattering in the extended edge states. These results can explain the more robust edge transport in InAs/GaSb QSH systems.
Separation of Top and Bottom Surface Conduction in Bi2te3 Thin Films

Xinxin Yu,Liang He,Murong Lang,Wanjun Jiang,Faxian Xiu,Zhiming Liao,Yong Wang,Xufeng Kou,Peng Zhang,Jianshi Tang,Guan Huang,Jin Zou,Kang L. Wang

DOI: https://doi.org/10.1088/0957-4484/24/1/015705

IF: 3.5

2012-01-01

Nanotechnology

Abstract:Quantum spin Hall (QSH) systems are insulating in the bulk with gapless edges or surfaces that are topologically protected and immune to nonmagnetic impurities or geometric perturbations. Although the QSH effect has been realized in the HgTe/CdTe system, it has not been accomplished in normal 3D topological insulators. In this work, we demonstrate a separation of two surface conductions (top/bottom) in epitaxially grown Bi2Te3 thin films through gate dependent Shubnikov-de Haas (SdH) oscillations. By sweeping the gate voltage, only the Fermi level of the top surface is tuned while that of the bottom surface remains unchanged due to strong electric field screening effects arising from the high dielectric constant of Bi2Te3. In addition, the bulk conduction can be modulated from n- to p-type with a varying gate bias. Our results on the surface control hence pave a way for the realization of QSH effect in topological insulators which requires a selective control of spin transports on the top/bottom surfaces.
Exciton Condensation in Landau Levels of Quantum Spin Hall Insulators

Hong-Mao Peng,Zhan Wang,Long Zhang

2024-03-08

Abstract:The interplay of band topology and electron interactions can lead to novel quantum states of matter. In this work, we theoretically study the quantum spin Hall insulator (QSHI) in a perpendicular magnetic field. In the noninteracting case, the QSHI with space inversion and uniaxial spin rotation symmetries undergoes a topological transition into a normal insulator phase at a critical magnetic field $B_{\mathrm{c}}$. The exciton condensation in the lowest Landau levels is triggered by Coulomb interactions in the vicinity of $B_{\mathrm{c}}$ and spontaneously breaks the inversion and the spin rotation symmetries. We propose that the electron spin resonance spectroscopy can directly probe the exciton condensation order. Our results should apply to the InAs/GaSb quantum wells and other QSHIs.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons
Spin-Triplet Topological Excitonic Insulators in Two-dimensional Materials

Huaiyuan Yang,Jiaxi Zeng,Yuelin Shao,Yuanfeng Xu,Xi Dai,Xin-Zheng Li

2023-04-02

Abstract:Quantum spin-hall insulator (QSHI) processes nontrivial topology. We notice that the electronic structures of some particular QSHIs are favorable for realization of excitonic insulators (EIs). Using first-principles many-body perturbation theory ($GW$+BSE) and $k \cdot p$ model, we show that high-temperature ($T$) topological EIs with unlike spin can exist in such QSHIs with non-vanishing band gaps, e.g. 2D AsO and $\text{Mo}_2\text{Ti}\text{C}_2\text{O}_2$. Spin-triplet type EI phase induced by strong electron-hole interaction preserves time-reversal symmetry and the topological characteristics. A novel optical selection rule exists, upon going through the phase transition from the normal QSHIs to the topological EIs, absorption spectroscopy shows pronounced $T$-dependent changes, providing guidance for future experimental detections. The demonstrated coupling between EIs and topology also means that rich physics exists in such materials which retain such interdisciplinary features.

Materials Science
Room Temperature Quantum Spin Hall Insulator in Ethynyl-Derivative Functionalized Stanene Films

Run-wu Zhang,Chang-wen Zhang,Wei-xiao Ji,Sheng-shi Li,Shi-shen Yan,Shu-jun Hu,Ping Li,Pei-ji Wang,Feng Li

DOI: https://doi.org/10.1038/srep18879

IF: 4.6

2016-01-05

Scientific Reports

Abstract:AbstractQuantum spin Hall (QSH) insulators feature edge states that topologically protected from backscattering. However, the major obstacles to application for QSH effect are the lack of suitable QSH insulators with a large bulk gap. Based on first-principles calculations, we predict a class of large-gap QSH insulators in ethynyl-derivative functionalized stanene (SnC2X; X = H, F, Cl, Br, I), allowing for viable applications at room temperature. Noticeably, the SnC2Cl, SnC2Br and SnC2I are QSH insulators with a bulk gap of ~0.2 eV, while the SnC2H and SnC2F can be transformed into QSH insulator under the tensile strains. A single pair of topologically protected helical edge states is established for the edge of these systems with the Dirac point locating at the bulk gap and their QSH states are confirmed with topological invariant Z2 = 1. The films on BN substrate also maintain a nontrivial large-gap QSH effect, which harbors a Dirac cone lying within the band gap. These findings may shed new light in future design and fabrication of large-gap QSH insulators based on two-dimensional honeycomb lattices in spintronics.

multidisciplinary sciences
Two-dimensional Rectangular Tantalum Carbide Halides TaCX (X = Cl, Br, I): Novel Large-Gap Quantum Spin Hall Insulators

Liujiang Zhou,Wujun Shi,Yan Sun,Bin Shao,Claudia Felser,Binghai Yan,Thomas Frauenheim

DOI: https://doi.org/10.1088/2053-1583/3/3/035018

IF: 6.861

2016-01-01

2D Materials

Abstract:Quantum spin Hall (QSH) insulates exist in special two-dimensional (2D) semiconductors, possessing the quantized spin-Hall conductance that are topologically protected from backscattering. Based on the first-principles calculations, we predict a novel family of QSH insulators in 2D tantalum carbide halides TaCX (X = Cl, Br, and I) with unique rectangular lattice and large direct energy gaps. The mechanism for 2D QSH effect originates from an intrinsic d-d band inversion in the process of chemical bonding. Further, stain and intrinsic electric field can be used to tune the electronic structure and enhance the energy gap. TaCX nanoribbon, which has the single-Dirac-cone edge states crossing the bulk band gap, exhibits a linear dispersion with a high Fermi velocity comparable to that of graphene. These 2D materials with considerable nontrivial gaps promise great application potential in the new generation of dissipationless electronics and spintronics.
Topological Edge States in Single- and Multi-Layer Bi4br4

Jin-Jian Zhou,Wanxiang Feng,Gui-Bin Liu,Yugui Yao

DOI: https://doi.org/10.1088/1367-2630/17/1/015004

2015-01-01

New Journal of Physics

Abstract:Topological edge states at the boundary of quantum spin Hall (QSH) insulators hold great promise for dissipationless electron transport. The device application of topological edge states has several critical requirements for QSH insulator materials, e.g. a large band gap, appropriate insulating substrates, and multiple conducting channels. In this paper, based on first-principles calculations, we show that Bi4Br4 is a suitable candidate. Single-layer Bi4Br4 was recently demonstrated to be a QSH insulator with sizable gap. Here we find that, in multilayer systems, both the band gaps and low-energy electronic structures are only slightly affected by the interlayer coupling. On the intrinsic insulating substrate of bulk Bi4Br4, the single-layer Bi4Br4 preserves its topological edge states well. Moreover, at the boundary of multilayer Bi4Br4, the topological edge states stemming from different single-layers are weakly coupled, and can be fully decoupled by constructing a stair-stepped edge. The decoupled topological edge states are very suitable for multi-channel dissipationless transport. Our work indicates that an ideal QSH insulator can be prepared by nano-fabricaton on the cleaved surface of layered Bi4Br4 single crystal.
New families of quantum spin Hall insulators with rashba effect in functionalized InBi monolayers

Ningyuan Shen,Yonghu Wang,Shuangying Lei,Neng Wan,Jie Chen

DOI: https://doi.org/10.1016/j.micrna.2022.207320

2022-01-01

Micro and Nanostructures

Abstract:Because quantum spin Hall (QSH) insulators with dissipative electron transport properties have broad application prospect in the field of quantum devices, QSH insulators have aroused great research enthusiasm and many ideal QSH insulators are predicted successfully. Based on density functional calculations, we predict that new families of functionalized InBi monolayers, H-InBi-X (X = F, Cl, Br, I), to be QSH insulators. We find that the pristine InBi monolayer that is simultaneously hydrogenated and halogenated has a maximum band gap of 0.49 eV while preserving the untrivial topological properties, which is large enough for room-temperature applications. Because of the absence of inversion symmetry, the Rashba SOC effect occurs in the band structure and the SOC not only opens the bandgaps but also leads to the band inversion. In addition, the topological properties of these monolayers can survive a wide range of external strain from -6% to 6%. Our findings enrich the inversion-asymmetry topological materials and provide a reliable reference for designing QSH insulators at room temperature.

Quantum spin Hall insulators and topological Rashba-splitting edge states in two-dimensional CX 3 (X = Sb, Bi)

Quantum Spin Hall Insulators And Topological Rashba-Splitting Edge States In Two-Dimensional Cx3 (X = Sb, Bi)

Topological Rashba-like Edge States in Large-Gap Quantum Spin Hall Insulators

The quantum spin Hall effect and topological insulators

Quantum spin Hall effect in antiferromagnetic topological heterobilayers

Robust Tunable Large-Gap Quantum Spin Hall States in Monolayer Cu2S on Insulating Substrates

Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

Quantum Spin-Quantum Anomalous Hall Insulators And Topological Transitions In Functionalized Sb(111) Monolayers

Direct Observation of the Topological Surface State in the Topological Superconductor 2M-WS2

Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures

Topological phase transition on the ruby lattice with Rashba spin–orbit coupling and an exchange field

Quantum oscillations in Rashba semiconductor BiTeCl

Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Effective Spin Dephasing Mechanism in Confined Two-Dimensional Topological Insulators

Separation of Top and Bottom Surface Conduction in Bi2te3 Thin Films

Exciton Condensation in Landau Levels of Quantum Spin Hall Insulators

Spin-Triplet Topological Excitonic Insulators in Two-dimensional Materials

Room Temperature Quantum Spin Hall Insulator in Ethynyl-Derivative Functionalized Stanene Films

Two-dimensional Rectangular Tantalum Carbide Halides TaCX (X = Cl, Br, I): Novel Large-Gap Quantum Spin Hall Insulators

Topological Edge States in Single- and Multi-Layer Bi4br4

New families of quantum spin Hall insulators with rashba effect in functionalized InBi monolayers