Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Influence of space charge on domain patterns and susceptibility in a rhombohedral ferroelectric film

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Domain Control in Ferroelectric Nanodots Through Surface Charges

Size Effects In Epitaxial Ferroelectric Islands And Thin Films

Unusual Domain Evolution in Semiconducting Ferroelectrics: A Phase Field Study

Space Charge Effect in Ultrathin Ferroelectric Films

Ferroelectric Phase Transitions in Films with Depletion Charge

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Internal Electric Field and Polarization BacksWitching Induced by Nb Doping in BiFeO3 Thin Films

Ferroelectric Domain Triggers the Charge Modulation in Semiconductors (Invited)

Control of domain states in rhombohedral PZT films via misfit strains and surface charges

Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film

Phase-field simulations of vortex chirality manipulation in ferroelectric thin films

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Effect of the depolarizing field on the domain structure of an improper ferroelectric

Domain Relaxation Dynamics in Epitaxial Bifeo3 Films: Role of Surface Charges

Stability and crossover of 71° and 109° domains influenced by the film thickness and depolarization field in rhombohedral ferroelectric thin films

Interface Engineering Of Domain Structures In Bifeo3 Thin Films

Control of Domain States in Rhombohedral Lead Zirconate Titanate Films via Misfit Strains and Surface Charges

Stability And Crossover Of 71 Degrees And 109 Degrees Domains Influenced By The Film Thickness And Depolarization Field In Rhombohedral Ferroelectric Thin Films

Unveiling the Pinning Behavior of Charged Domain Walls in BiFeO3 Thin Films Via Vacancy Defects