A universal platform for magnetostriction measurements in thin films

Matthias Pernpeintner,Rasmus B. Holländer,Maximilian J. Seitner,Eva M. Weig,Rudolf Gross,Sebastian T. B. Goennenwein,Hans Huebl

DOI: https://doi.org/10.1063/1.4942531

2015-09-02

Abstract:We present a universal nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly-clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetostrictive stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g. by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. We use this method to determine the magnetostriction constants of a 10nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique can be useful in particular for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by e.g. electron beam deposition, thermal evaporation or sputtering.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

This paper aims to solve the problem of measuring magnetostrictive properties in thin - film materials. Specifically, the author proposes a general nano - mechanical sensing platform for studying magnetostrictive phenomena in thin films. This platform is based on a silicon nitride nano - beam fixed at both ends, with a thin layer of magnetostrictive material covering its surface. By changing the magnetization direction in the plane of the thin film (applying an external magnetic field), magnetostrictive stress can be generated, thus changing the resonant frequency of the nano - beam. By measuring the change in resonant frequency, the magnetostrictive constant of the thin film can be quantitatively determined.

### Main problems and solutions
1. **Problem**: How to accurately measure the magnetostrictive constants of thin films of different materials (conductive or insulating)?
2. **Solutions**:
- **Platform design**: Use a silicon nitride nano - beam fixed at both ends as the substrate, with a layer of magnetostrictive thin film to be measured covering its surface.
- **Measurement method**: By applying an external magnetic field to change the magnetization direction of the thin film, resulting in a change in magnetostrictive stress, which in turn affects the resonant frequency of the nano - beam. Use the optical interferometry method to measure the change in resonant frequency, thereby deriving the magnetostrictive constant.
- **Model establishment**: A theoretical model describing the relationship between magnetostrictive stress and resonant frequency change has been established, and the accuracy of the model has been verified by experimental data.

### Experimental verification
- **Experimental sample**: A 10 - nanometer - thick polycrystalline cobalt thin film.
- **Experimental steps**:
1. Prepare a single - crystal silicon wafer, and deposit a 200 - nanometer - thick thermal oxide layer and a 90 - nanometer - thick high - stress silicon nitride thin film on it.
2. Use electron - beam lithography, aluminum evaporation and lift - off processes to fabricate a 25 - micrometer - long, 350 - nanometer - wide nano - beam fixed at both ends.
3. Transfer the structure to the silicon nitride layer by reactive ion etching, and then release the nano - beam using buffered hydrofluoric acid.
4. Finally, use electron - beam evaporation to deposit a 10 - nanometer - thick cobalt thin film on the chip.
- **Measurement method**: Under room - temperature vacuum conditions (pressure < 10^-4 mbar), use a fiber - optic interferometer to measure the change in resonant frequency. Provide a uniform external magnetic field by an electromagnet and rotate the magnetic field direction to control the magnetization direction.

### Results and discussion
- **Resonant frequency change**: The experimental results show that the change in resonant frequency is proportional to the square of the cosine of the magnetization direction, which is in line with theoretical predictions.
- **Magnetostrictive constant**: By analyzing the maximum change in resonant frequency, the magnetostrictive constants parallel and perpendicular to the magnetization direction are calculated as \(\lambda_{\parallel}=- 79.7\times10^{-6}\) and \(\lambda_{\perp}=27.9\times10^{-6}\) respectively, which are very close to the literature values.
- **Advantages**: This method does not rely on the quantitative measurement of mechanical displacement, but determines the magnetostrictive constant through the change in resonant frequency, which is suitable for very thin - film materials and has high precision and reliability.

### Conclusion
The method proposed in this paper provides a new platform for accurately measuring the magnetostrictive properties of thin films of different materials, especially for very thin - film materials. This method not only has high precision, but also is easy to operate and is suitable for a variety of conductive and insulating materials.