Phosphorene and Transition Metal Dichalcogenide 2D Heterojunctions: Application in Excitonic Solar Cells

Vellayappan Dheivanayagam S/O Ganesan,Chun Zhang,Yuan Ping Feng,Lei Shen

DOI: https://doi.org/10.48550/arXiv.1507.07343

2015-07-27

Abstract:Using the first-principles GW-Bethe-Salpeter equation method, here we study the excited-state properties, including quasi-particle band structures and optical spectra, of phosphorene, a two-dimensional (2D) atomic layer of black phosphorus. The quasi-particle band gap of monolayer phosphorene is 2.15 eV and its optical gap is 1.6 eV, which is suitable for excitonic thin film solar cell applications. Next, this potential application is analysed by considering type-II heterostructures with single layered phosphorene and transition metal dichalcogenides (TMDs). These heterojunctions have a potential maximum power conversion efficiency of up to 12\%, which can be further enhanced to 20\% by strain engineering. Our results show that phosphorene is not only a promising new material for use in nanoscale electronics, but also in optoelectronics.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to evaluate the application potential of phosphorene and its two - dimensional heterojunctions formed with transition metal dichalcogenides (TMDs) in excitonic solar cells. Specifically, the researchers studied the excited - state properties of phosphorene, including quasiparticle band structure and optical spectra, through the first - principles GW - Bethe - Salpeter equation method, and analyzed the maximum power conversion efficiency (PCE) of these material combinations in excitonic thin - film solar cells.

### Main problems:
1. **Excited - state properties of phosphorene**: Study the electronic bandgap and optical bandgap of phosphorene to determine whether it is suitable for use in excitonic solar cells.
2. **Performance of heterojunctions**: Evaluate the performance of type - II heterostructures formed by phosphorene and different TMDs (such as MoS₂, MoSe₂, WS₂, etc.), especially their maximum power conversion efficiency (PCE).
3. **Methods to improve PCE**: Explore the possibility of further improving the PCE of phosphorene - based solar cells by means such as strain engineering.

### Key findings:
- The quasiparticle bandgap of phosphorene is 2.15 eV, and the optical bandgap is 1.6 eV, which makes it a potential candidate material for excitonic thin - film solar cells.
- Heterostructures formed by phosphorene and some TMDs (such as ZrS₂ and MoTe₂) can achieve a PCE as high as 12%.
- Through strain engineering, the PCE of phosphorene can be further increased to approximately 20%.

### Conclusion:
Phosphorene has application prospects not only in nanoelectronics but also in the optoelectronic field. By optimizing material combinations and structural designs, the efficiency of phosphorene - based excitonic solar cells can be significantly improved.