I-V characteristics of in-plane and out-of-plane strained edge-hydrogenated armchair graphene nanoribbons

Santiago J. Cartamil-Bueno,Salvador Rodríguez-Bolívar

DOI: https://doi.org/10.48550/arXiv.1506.05601

2015-06-18

Abstract:The effects of tensile strain on the current-voltage (I-V) characteristics of hydrogenated-edge armchair graphene nanoribbons (HAGNRs) are investigated by using DFT theory. The strain is introduced in two different ways related to the two types of systems studied in this work: in-plane strained systems (A), and out-of-plane strained systems due to bending (B). These two kinds of strain lead to make a distinction among three cases: in-plane strained systems with strained electrodes (A1) and with unstrained electrodes (A2), and out-of-plane homogeneously strained systems with unstrained, fixed electrodes (B). The systematic simulations to calculate the electronic transmission between two electrodes were focused on systems of 8 and 11 dimers in width. The results show that the differences between cases A2 and B are negligible, even though the strain mechanisms are different: in the plane case, the strain is uniaxial along its length, while in the bent case the strain is caused by the arc deformation. Based on the study, a new type of NEMS-solid state switching device is proposed.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study how the current - voltage (I - V) characteristics of edge - hydrogenated armchair - shaped graphene nanoribbons (HAGNRs) change under different strain conditions. Specifically, the authors used density functional theory (DFT) to study the effects of two types of strains on the electronic transport properties of HAGNRs:

1. **In - plane strain**: This strain mode includes two cases:
- **A1**: The electrodes and the central region are strained simultaneously.
- **A2**: Only the central region is strained, while the electrodes remain unstrained.

2. **Out - of - plane strain**: This strain is caused by bending. The electrodes are fixed and unstrained, while the central region undergoes uniform strain.

Through these studies, the authors hope to understand the electronic transport properties of HAGNRs under different strain mechanisms and explore whether these property changes can be used to design new nano - electromechanical systems (NEMS) solid - state switching devices. It is specifically mentioned in the paper that by controlling the mechanical deformation of the material, a periodic transition from metal / semimetal to semiconductor / insulator can be achieved, thus proposing a new solid - state switching mechanism based on graphene nanoribbons.