Resonant high harmonic generation in a ballistic graphene transistor with an AC driven gate

Y. Korniyenko,O. Shevtsov,T. Lofwander
DOI: https://doi.org/10.1103/PhysRevB.93.035435
2015-06-10
Abstract:We report a theoretical study of time-dependent transport in a ballistic graphene field effect transistor. We develop a model based on Floquet theory describing Dirac electron transmission through a harmonically driven potential barrier. Photon-assisted tunneling results in excitation of quasibound states at the barrier. Under resonance condition, the excitation of the quasibound states leads to promotion of higher-order sidebands and enhanced higher harmonics of the source-drain conductance. The resonances in the main transmission channel are of the Fano form, while they are of the Breit-Wigner form for sidebands. We discuss the possibility of utilizing the resonances in prospective ballistic high-frequency devices, in particular frequency multipliers.
Mesoscale and Nanoscale Physics
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