Abstract:We report a theoretical study of time-dependent transport in a ballistic graphene field effect transistor. We develop a model based on Floquet theory describing Dirac electron transmission through a harmonically driven potential barrier. Photon-assisted tunneling results in excitation of quasibound states at the barrier. Under resonance condition, the excitation of the quasibound states leads to promotion of higher-order sidebands and enhanced higher harmonics of the source-drain conductance. The resonances in the main transmission channel are of the Fano form, while they are of the Breit-Wigner form for sidebands. We discuss the possibility of utilizing the resonances in prospective ballistic high-frequency devices, in particular frequency multipliers.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to study the time - dependent transport properties of graphene field - effect transistors (GFETs) when an AC driving signal is applied. Specifically, the authors attempt to solve the following key problems: 1. **Generation of resonant higher - order harmonics**: The paper explores the enhancement of higher - order sidebands and the higher - order harmonic enhancement of source - drain conductance in graphene field - effect transistors due to the excitation of quasi - bound states under resonant conditions. This provides a theoretical basis for the development of frequency multipliers based on ballistic devices. 2. **Quantum - assisted tunneling**: By introducing a time - periodic potential barrier, the paper studies how photon - assisted tunneling can excite quasi - bound states under resonant conditions, thereby affecting transport properties. In particular, Fano resonances are observed in the main transport channel, while Breit - Wigner resonances are observed in the sidebands. 3. **Application potential in high - frequency electronic devices**: The paper discusses the potential applications of these resonance phenomena in future high - frequency electronic devices, especially the possibility of frequency multipliers. By studying the ballistic transport properties in detail, the authors hope to reveal the advantages of graphene in high - frequency applications. ### Specific problem description - **Background and motivation**: Early graphene research has recognized its potential application value in high - frequency analog electronics. Although actual devices may be limited by parasitic effects, the rapid improvement in graphene material quality makes it particularly important to study its high - frequency performance in depth. - **Model and method**: The authors establish a model based on Floquet theory to describe the transport of Dirac electrons through a resonantly driven potential barrier. They analyze how the excitation of quasi - bound states under specific resonant conditions leads to the enhancement of higher - order sidebands and ultimately affects the overall transport properties. - **Experimental results and conclusions**: Through numerical calculations and analytical analyses, the authors show that within a specific energy range, the transmission probability exhibits obvious Fano and Breit - Wigner resonance characteristics. In particular, near the resonant energy, the inelastic tunneling of the second sideband is significantly enhanced, resulting in a strong response of the second - order harmonic. In summary, through theoretical modeling and numerical simulation, this paper reveals the unique transport properties of graphene field - effect transistors under AC driving and proposes their potential application prospects in high - frequency electronic devices.

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