Abstract:Abstract The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In the realm of quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III–V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. However, combining different materials on a single wafer is challenging and may result in low reproducibility and/or low yield. For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, and wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes that contain InAs quantum dots and which have dimensions up to about 260 μ m × 80 μ m onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 × 10 5 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanophotonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.

Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics

Photonic integrated circuits fabricated using quantum well intermixing

Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters

High-Q Optomechanical GaAs Nanomembranes

Photonic-integrated circuits and components using quantum well intermixing

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Dry etching of deep air holes in GaAs/AlGaAs-based epi-wafer having InAs quantum dots for fabrication of photonic crystal laser

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Gallium Arsenide (gaas) Quantum Photonic Waveguide Circuits

Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Fabricating 3D Si nanostructure via a novel Ga+ implantation enabled maskless dry etching process

Demonstration of High-Performance, Sub-Micron Chalcogenide Glass Photonic Devices by Thermal Nanoimprint

Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si$_3$N$_4$ quantum photonic circuits

Ar/Cl$_{2}$ etching of GaAs optomechanical microdisks fabricated with positive electroresist

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

InGaAs Quantum Dot Molecules During Selective Etching Using an in Droplet Mask

GaAs Nanostructuring by Self-Organized Stencil Mask Ion Lithography

Semiconductor Membranes for Electrostatic Exciton Trapping in Optically Addressable Quantum Transport Devices

Dry etching of epitaxial InGaAs/InAlAs/InAlGaAs structures for fabrication of photonic integrated circuits