Abstract:The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite insulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been made to decipher the puzzle of the origin of interface conduction, to design new types of oxide interfaces, and to improve the interfacial carrier mobility significantly. These achievements open the door to explore fundamental as well as applied physics of complex oxides. Here, we review our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures. Due to the presence of oxygen-vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 involves Al, Ti, Zr, or Hf elements at the B-sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel {\gamma}-Al2O3 epitaxial film with compatible oxygen ions sublattices. The spinel/perovskite oxide 2DEG exhibits an electron mobility exceeding 100,000 cm2V-1s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for design of high-mobility all-oxide electronic devices and open a route towards studies of mesoscopic physics with complex oxides.

Oxide 2D electron gases as a route for high carrier densities on (001) Si

Synthesis of Oxide Interface-Based Two-Dimensional Electron Gas on Si

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

Suppressed Carrier Density for the Patterned High Mobility Two-Dimensional Electron Gas at Gamma-Al2o3/Srtio3 Heterointerfaces

Anisotropic two-dimensional electron gas at SrTiO3(110) protected by its native overlayer

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

Oxide tunnel junctions supporting a two-dimensional electron gas

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Direct observation of a two-dimensional hole gas at oxide interfaces

Enabling 2D Electron Gas with High Room-Temperature Electron Mobility Exceeding 100 cm2 Vs-1 at a Perovskite Oxide Interface

Enabling two-dimensional electron gas with high room-temperature electron mobility exceeding 100 cm$^2$/Vs at a perovskite oxide interface

High stability 2D electron gases formed in Si3N4/Al//KTaO3 heterostructures: synthesis and in-depth interfacial characterization

Tunable one-dimensional electron gas carrier densities at nanostructured oxide interfaces

Two-Dimensional Electron or Hole Gas at Zno/6h-Sic Interface

Two-Dimensional Electron Gas in Zn-Polar Znmgo/Zno Heterostructure Grown by Metal-Organic Vapor Phase Epitaxy

A two-dimensional electron gas based on a 5<i>s</i> oxide with high room-temperature mobility and strain sensitivity

A Termination-Insensitive and Robust Electron Gas at the Heterointerface of Two Complex Oxides