Abstract:Thermoelectric effects in magnetic tunnel junctions are currently an attractive research topic. Here, we demonstrate that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic 1 state and off to 0 by simply changing the magnetic state of the CoFeB electrodes. We enable this new functionality of magnetic tunnel junctions by combining a thermal gradient and an electric field. This new technique unveils the bias-enhanced tunnel magneto-Seebeck effect, which can serve as the basis for logic devices or memories in a green information technology with a pure thermal write and read process. Furthermore, the thermally generated voltages that are referred to as the Seebeck effect are well known to sensitively depend on the electronic structure and therefore have been valued in solid-state physics for nearly one hundred years. Here, we lift Seebeck's historic discovery from 1821 to a new level of current spintronics. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance (TMR) and even completely suppressed for only one magnetic configuration, which is either parallel (P) or anti-parallel (AP). This option allows a readout contrast for the magnetic information of -3000% at room temperature while maintaining a large signal for one magnetic orientation. This contrast is much larger than the value that can be obtained using the TMR effect. Moreover, our measurements are a step towards the experimental realization of high TMS ratios, which are predicted for specific Co-Fe compositions.

Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions

Microstructural Underpinnings of Giant Intrinsic Exchange Bias in Epitaxial NiCo2O4 Thin Films

Giant Exchange Bias Effect In All-3d-Metal Ni38.8co2.9mn37.9ti20.4 Thin Film

Exchange Bias Effect and Magnetic Properties in ${\Hbox{la}}_{0.7}{\hbox{sr}}_{0.3}{\hbox{mno}}_{3}\hbox{-}{\Hbox{nio}}$ Nanocomposite Films

Exchange Bias Effect of Epitaxial Noncollinear Antiferromagnetic Mn3Sn Films

Exchange bias effect of epitaxial noncollinear antiferromagnetic Mn 3 Sn films

Nitrogen-Based Magneto-Ionic Manipulation of Exchange Bias in CoFe/MnN Heterostructures

Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias

Exchange Bias Effects in Ferromagnetic MnSb2Te4 Down to a Monolayer

Exchange bias in Sm$ _{2} $NiMnO$ _{6}$/BaTiO$ _{3}$ ferromagnetic-diamagnetic heterostructure thin films

Exchange Bias Effects in Ferromagnetic MnSb 2 Te 4 down to a Monolayer

Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

Exchange bias in the van der Waals heterostructure MnBi2Te4/Cr2Ge2Te6

Unexpected Exchange Bias Behaviour in CoFeB Ultrathin Films for MTJ Sensors Investigated by Lorentz Microscopy

Exchange Bias Effects in Ferromagnetic MnSb<sub>2</sub>Te<sub>4</sub> down to a Monolayer

Antiferromagnetic cubic anisotropy governed exchange bias in CoFeB/IrMn bilayers

Manipulation of perpendicular exchange bias effect in [Co/Ni]N/(Cu, Ta)/TbCo multilayer structures

Magnetoelectric Switching of Exchange Bias.

Exchange Bias and Its Thermal Stability in Ferromagnetic/antiferromagnetic Antidot Arrays

Exchange bias induced by CoMn2O4 interface grown through sequential annealing in Mn2O3@Co3O4 core–shell nanocomposite

On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect